Optimization and Comparison between the efficiency of GaNAsSb and GaInNAs single solar cells deposed on GaAs

Abstract

In this work we study and optimize the single solar cell efficiency of GaN_xAs_1-x-ySb_y and Ga_1-xIn_xN_yAs_1-y deposed on GaAs. The solar cells are simulated, in the aim to find the best concentration of nitrogen and antimony for GaN_xAs_1-x-ySb_y, and indium and nitrogen for Ga_1-xIn_xN_yAs_1-y which gives us a band gap energy around 1 eV with a low strain and a maximum absorption, in fact we do not have only one value but a whole interval for both structures. In the second step we simulate the efficiency of both GaNAsSb and GaInNAs solar cells with the find concentration values in order to see which of the two structures will give a higher efficiency. We noticed that the results were obtained under AM1.5 illumination, 300 K and an ambient pressure. The two structures had a thickness of 300 nm. The N and P layers have a doping level of 1.10¹⁵ cm^-3 and 1.10¹⁶ cm^-3 respectively. This study gives us the possibility to produce multi-function solar cells.