Physica E: Low-dimensional Systems and Nanostructures
Bilayer counterflow transport at filling factor 1 in the strong interacting regime
Introduction
Two-dimensional (2D) systems have been host to a number of major discoveries in condensed matter physics, of which the most notable are the integer and fractional quantum Hall (QH) effects [1], [2]. With the advent of new technologies in semiconductor crystal growth and the availability of better quality samples, experimental studies have revealed the existence of a number of new quantum phases in addition to the QH phases. Among these are the Wigner crystal phase at low Landau level filling factors [3], the stripe [4] and bubble phases at even denominator fillings (e.g. at and ). Making use of state-of-the-art techniques, such as molecular beam epitaxy, energy band engineering, and modulation doping of semiconductors, 2D carrier systems can be fabricated today with exceptionally high mobilities [5].
For more than a decade, a new class of quasi-2D carriers, namely the bilayer carrier system has also been the subject of significant experimental and theoretical investigation. These systems are realized by bringing two layers of carriers in close proximity. Experimentally this is done by either growing two layers (quantum wells) of the lower band gap semiconductor (e.g. GaAs) separated by a barrier (e.g. AlAs), or by growing a wide well with sufficiently high density so that the carriers occupy two (symmetric and antisymmetric) subbands.
Several landmark contributions have stimulated the interest in studying bilayers. One of the most important was the observation of a quantum Hall state (QHS) at total filling factor , by Suen et al. [6] and Eisenstein et al. [7], a quantum phase that is not observable in single layers. Murphy et al. [8] have shown that a QHS at total filling factor ( in each layer) can be stabilized in bilayers with negligible tunneling between the two layers. These special QHSs form when the inter-layer Coulomb interaction is comparable in strength to the intra-layer interaction, leading to many-particle ground states that involve the carriers of both layers.
Here we examine the physics of the bilayer QHS, which forms at a layer filling factor where normally no QHS is observed in a single layer 2D system. At filling factor in a single layer 2D system, each carrier pairs with two flux quanta resulting in quasi-particles which are fermions (composite fermions). The composite fermions form a degenerate gas at the lowest temperatures much like a weekly interacting Fermi gas. On the other hand, if two layers, each at filling factor , are brought into close proximity, their physics dramatically changes and the systems can form a QHS. The simplest way to understand this is to regard the lowest Landau levels of the two layers at filling as half filled with particles and half filled with vacancies. Pairing a particle in one layer with a vacancy in another results in composite, electrically neutral particles, namely excitons. The excitons are bosons and can condense at the lowest temperatures, thus forming a peculiar QHS at this filling factor.
Section snippets
The bilayer QHS
In a simple picture where the two layers are considered independent, i.e. when there is no inter-layer tunneling and no Coulomb interaction between the layers, a bilayer QHS at total filling factor should not exist. One way to stabilize a QHS at in a bilayer is to allow for the carriers to tunnel from one layer to another. At total filling factor the carriers occupy the lowest Landau level of the symmetric subband, stabilizing a QHS at this filling factor. The bilayer QHS in a
Counterflow measurements in GaAs hole bilayers
The sample used in this study is a Si-modulation-doped GaAs double-layer hole system grown on a GaAs (311)A substrate. It consists of two, 15 nm wide, GaAs quantum wells separated by an 8 nm wide AlAs barrier. The top and bottom barriers are Al0.2Ga0.8As layers. We used a Hall bar geometry of width, aligned along the crystal direction. The Hall bar mesa has two current leads at each end, and three leads for measuring the longitudinal and Hall voltages across the bar. Diffused InZn
Acknowledgments
It is a pleasure to acknowledge illuminating discussions with D.A. Huse, K. Yang, and R. Pillarisetty. This work was supported by DOE and NSF.
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Charge neutral counterflow transport at filling factor 1 in GaAs hole bilayers
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