Carrier transfer and luminescence characteristics of concentration-dependent phosphorescent Ir(ppy)3 doped CBP film
Introduction
Since tris(8-hydroxyquinolate) aluminum (Alq3) was first demonstrated for green organic light-emitting diodes (OLEDs) [1], which have received considerable attention for energy-saving solid-state lighting and eco-friendly flat panel display applications [2], [3], [4], [5]. However, the main bottleneck for the realization of OLED applications is the organic material, which should ideally combine high fluorescence quantum yield, suitable energy level alignment, high thermal stability, and good thin-film morphology. Utilization of phosphorescence material in OLED is a good way to satisfy above requirements for advanced commercial application of OLED, owing to emission from both triplet and singlet excitons in phosphorescence material. Phosphor complexes based on heavy metal showed the characteristic of strong spin–orbit coupling, which induced nearly 100% of internal quantum yield [6], [7], [8], [9].
Particularly, cyclometalated Ir(III) complexes are promising candidates for room-temperature phosphorescence owing to their highly efficient emission derived from mixed metal-to-ligand charge transfer (MLCT) [10]. To date, dopant of Ir(ppy)3 in 4,4′-bis(carbazol-9-yl)-biphenyl (CBP) is very classic doping system reported widely. The lowest unoccupied molecular orbital (LUMO) energy level of Ir(ppy)3 is approximately equal to that of CBP, resulting in efficient electrons trapping on Ir(ppy)3. Next, the triplet excitons of Ir(ppy)3 were confined in CBP due to the lower triplet energy level relative to CBP [11]. Finally, there is great large spectral overlap between the fluorescence band of CBP and the excitation band of Ir(ppy)3 [12], [13], indicating the sufficient Förster energy transfer from CBP to Ir(ppy)3.
However, little effort has been directed toward understanding of the nature of carrier transfer characteristic of concentration-dependent Ir(ppy)3. Previous studies have demonstrated that small amount of phosphorescent dopant in hole-transporting material can not only help to lower turn-on voltage, but also contribute to fabricate white OLED with a high efficiency and a high color rendering index [14], [15], [16]. In addition, excitons generated from Ir(ppy)3 were quenched by triplet–triplet annihilation easily, which due to relatively longer phosphorescent lifetime [17], [18], [19]. Therefore, it still have a room to study carrier transfer and luminescence properties of concentration-dependent in Ir(ppy)3:CBP film. In this paper, charge-only devices and OLEDs with different doping concentrations of Ir(ppy)3 in CBP film were fabricated. The carriers transfer capacity and luminescence property of concentration-dependent in Ir(ppy)3:CBP film were also studied in detail.
Section snippets
Experiments
The CBP:Ir(ppy)3 film were fabricated to verify carrier transfer capacity as follows, ITO/NPB (30 nm)/CBP:Ir(ppy)3 (x wt%, 40 nm)/Ag (10 nm) /Al (200 nm) and ITO/TPBi (20 nm)/CBP:Ir(ppy)3 (x wt%, 40 nm)/TPBi (20 nm)/Al (200 nm) for hole-only and electron-only devices, respectively. Furthermore, in order to determine the optimum doping concentration of Ir(ppy)3, three devices were fabricated by varying doping concentration of Ir(ppy)3 from x=5, to x=10, to x=15 in CBP as emissive layer (EML) for Device A, B,
Carrier transfer property
It has been widely known that CBP has versatile function in OLED devices, which can act as host material of plenty of phosphorescence dopants in OLED and a bipolar transfer material. Nevertheless, the carrier transfer property of Ir(ppy)3:CBP is rarely mentioned. We constructed charge-only devices based on Ir(ppy)3:CBP film to investigate the carrier transfer property. The current density–voltage curves of hole-only and electron-only devices are plotted in Fig. 2(a) and (b), respectively. The
Conclusion
In summary, the characteristic of concentration-dependent Ir(ppy)3:CBP film has been investigated. The doping level of Ir(ppy)3 molecules in CBP matrix can not only change carrier transfer characteristics, but also affect its luminescence properties. Improving in hole transfer was obtained using 10 wt% Ir(ppy)3 doped in CBP film, which can effectively improved the performance of OLED.
The improvement in hole transfer characteristics of Ir(ppy)3:CBP film indicates that the ppy group in Ir(ppy)3
Acknowledgment
This work was financially supported by International Science & Technology Cooperation Program of China (2012DFR50460), National Natural Scientific Foundation of China (21071108, 60976018, 21101111, 61136003, and 61275041) and Innovation Group Project from Shanghai Education Commission.
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