Elsevier

Journal of Crystal Growth

Volume 450, 15 September 2016, Pages 140-147
Journal of Crystal Growth

Rapid synthesis of transition metal dichalcogenide few-layer thin crystals by the microwave-induced-plasma assisted method

https://doi.org/10.1016/j.jcrysgro.2016.06.009Get rights and content
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Highlights

  • Few-layer thin crystals of WS2, MoS2, WSe2, MoSe2 and ReS2 were synthesized.

  • Microwave- plasma-assisted synthesis were used.

  • Plasma was formed inside sealed quartz ampoules, heated be plasma surrounding these ampoules.

  • This plasma synthesis is applicable to many direct reactions between metal and volatile nonmetal.

Abstract

Few-layer thin crystals of WS2, MoS2, WSe2, MoSe2 and ReS2 were synthesized via the microwave-induced-plasma-assisted method. The synthesis was accomplished in plasma that was formed inside sealed quartz ampoules heated by plasma surrounding the sealed ampoule. Powder X-ray diffraction, Raman spectroscopy and Transmission Electron Microscopy indicate thin crystals of high-quality. The proposed method is rapid, reproducible and environmentally friendly. It is applicable to practically every direct reaction between metals and nonmetals if the nonmetal vapor pressure can reach a pressure of a few torr, which is required for plasma formation inside a sealed ampoule.

Keywords

A2. Plasma synthesis
B1. Nanomaterials
B2. Semiconducting materials
B2. Transition metal dichalcogenides

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