Optical and electrical properties of the nanodisk-shaped SnS layers grown by sputtering

In this data article, we presented the structural, optical, and electrical data of the nanodisk-shaped SnS layers. A facile formation of orthorhombic SnS derived from SnS2 particles was discussed in our previous study (Patel et al., 2017) [1]. The data includes the standard XRD patterns supercell structure of the Orthorhombic SnS material, the photograph of prepared samples, thickness dependent absorbance spectra, and temperature dependent carrier concentration and its mobility estimated from the hall measurement of SnS samples.


a b s t r a c t
In this data article, we presented the structural, optical, and electrical data of the nanodisk-shaped SnS layers. A facile formation of orthorhombic SnS derived from SnS 2 particles was discussed in our previous study (Patel et al., 2017) [1]. The data includes the standard XRD patterns supercell structure of the Orthorhombic SnS material, the photograph of prepared samples, thickness dependent absorbance spectra, and temperature dependent carrier concentration and its mobility estimated from the hall measurement of SnS samples.
& 2017 Published by Elsevier Inc. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/). Table   Subject  The data are with this article

Value of the data
Rietveld refined XRD pattern of nanodisk-shaped SnS sample confirmed the orthorhombic crystalline structure of few-layered SnS material [1].
Thickness-dependent optical properties of nanodisk-shaped SnS sample would be useful to explore the SnS as a photonic material.
Temperature dependent carrier concentration and its mobility data provide the information for the electrical properties of nanodisk-shaped SnS material. These data would be valuable to explore the transport properties of this material.

Data
Fig . 1 shows the super cell presentation of the orthorhombic SnS material of pace group Pbnm(62) having the unit cell dimension as a ¼4.33, b¼ 11.18 and c ¼3.98 Å. This structure was prepared using the crystallographic open data COD file 9008785. Standard XRD pattern of orthorhombic SnS material generated using this file with Pseudo-Voigt profile function with 2theta step ¼ 0.01°, FWHM ¼0.4°, base width ¼10°, with enabled Lorentz and Polarization factors is shown in Fig. 2. Semitransparent SnS samples of various thicknesses are shown in Fig. 3a. Absorbance data as a function of photon energy (hv) these samples are shown in Fig. 3b. SnS samples of various thicknesses were prepared by controlling the deposition time as detailed in the reference [1]. Temperature dependent Hall-measurement of 100 nm thick SnS sample prepared on the quartz wafer is shown in Fig. 4.

Preparing SnS samples
SnS films were grown on the quartz wafer and the FTO/glass. These substrates were cleaned in a series of chemical baths containing isopropyl alcohol, acetone, and distilled water using ultrasonication before SnS film growth. RF sputtering power of 50 W was applied to the SnS 2 target (SnS 2 , 99.999%, iTASCO, TSNALT0027) to shower the SnS 2 particles. These particles undergo the phase structural transition to form the SnS material [1]. This process was performed at 6 mTorr of working pressure under the flowing Ar (50 sccm) gas at the substrate temperature of 400°C. The growth rate of SnS film was 5 nm per minute. Various thickness of SnS samples was obtained by controlling the deposition time.
Optical characteristics of SnS samples were measured using by UV-visible diffused reflectance (UVDRS) spectrophotometer (Shimadzu, UV-2600). Hall measurement was performed by using the Hall measurement system from Ecopia. Ag paste was applied to make Ohmic contact to 100 nm thick SnS sample. The temperature was varied from 300 K to 375 K with appropriate shield and device under test unit.