Physical, chemical, and optical data of SnS layers and light switching frequency dependent photoresponses

In this data article, vertically grown SnS layers were investigated. The growth processes of vertical SnS layers were discussed in our article [1]. This data article provides the chemical analysis using the XPS measurements for the SnS sample grown on a Si wafer. Deposition time varying SnS morphology changes were observed by FESEM. The cross-sectional images were achieved to monitor the SnS layer thickness. Refractive index of the grown SnS film was calculated using the reflectance data. A self-operating photoelectric was realized with structuring of SnS layers on the n-type Si wafer. Transient photoresponses were achieved by tuning the switching frequencies.


a b s t r a c t
In this data article, vertically grown SnS layers were investigated. The growth processes of vertical SnS layers were discussed in our article [1]. This data article provides the chemical analysis using the XPS measurements for the SnS sample grown on a Si wafer. Deposition time varying SnS morphology changes were observed by FESEM. The cross-sectional images were achieved to monitor the SnS layer thickness. Refractive index of the grown SnS film was calculated using the reflectance data. A self-operating photoelectric was realized with structuring of SnS layers on the n-type Si wafer. Transient photoresponses were achieved by tuning the switching frequencies.
& Refractive index and reflectance data of SnS sample could be useful in the designing of photoelectric devices.
The vertical SnS layers were applied for a high-performing photodetector.

Data
Chemical analyses of the prepared SnS thin film based upon XPS analysis are provided in Figs. 1-3. XPS survey spectra including the Sn3d and the S2p spectra confirm the chemical states corresponding to the Sn þ 2 and S -2 states. The thickness-dependent surface morphology and cross-sectional FESEM images of vertical layers of SnS stacked on Si wafer are shown in Fig. 4. Cross-sectional images of SnS  [5] and SnS 2 , [6]. The thickness of multilayers of SnS was estimated by using the FESEM image, as shown in Fig. 5. Refractive index of the grown SnS films was calculated using the reflectance data. Both reflectance and refractive index data of SnS film are shown in Fig. 6. Photoresponse data of  SnS/n-Si device and light switching frequency dependent are shown in Fig. 7. The light source of wavelength 850 nm was used to acquire these data.

SnS sample preparation and device making
Vertically oriented SnS layers [1] were achieved by using the reactive RF sputtering from a SnS 2 target material. The reactive process at 300°C of substrate temperature induced the phase structural transition and sulfur dissociation in SnS 2 deposits. In order to fabricate the photodetector, the vertical SnS layers were formed on an n-type Si. A transparent conductor of ITO was capped onto the SnS layers to sever a front contact. To make a rear contact, Al electrode was deposited on the back of the n-Si substrate.

Sample characterizations
The chemical analysis of vertically grown SnS sample as shown in Figs. 1-3 was obtained using the X-ray photoelectron spectroscopy (XPS, PHI 5000 VersaProbe ll). The cross-sectional, surface morphology of vertically grown SnS samples were captured by using a field emission scanning electron microscope (FESEM, JEOL, JSM_7800F) (Figs. [4][5]. Reflectance data of the SnS sample was recorded between the wavelength ranges from 100 nm to 300 nm (Fig. 6). Diffused integrating sphere was used to mount the SnS sample. Near infrared photodetection properties of the fabricated SnS device was studied by tuning the light illumination frequencies. Chronoamperometry technique was performed to study the photocurrent of the device. The acquired data are shown in the Fig. 7.

Transparency document. Supporting information
Transparency data associated with this article can be found in the online version at http://dx.doi. org/10.1016/j.dib.2017.07.056.