The properties of transparent TiO2 films for Schottky photodetector

In this data, the properties of transparent TiO2 film for Schottky photodetector are presented for the research article, entitled as “High-performing transparent photodetectors based on Schottky contacts” (Patel et al., 2017) [1]. The transparent photoelectric device was demonstrated by using various Schottky metals, such as Cu, Mo and Ni. This article mainly shows the optical transmittance of the Ni-transparent Schottky photodetector, analyzed by the energy dispersive spectroscopy and interfacial TEM images for transparency to observe the interface between NiO and TiO2 film. The observation and analyses clearly show that no pinhole formation in the TiO2 film by Ni diffusion. The rapid thermal process is an effective way to form the quality TiO2 film formation without degradation, such as pinholes (Qiu et al., 2015) [2]. This thermal process may apply to form functional metal oxide layers for solar cells and photodetectors.


a b s t r a c t
In this data, the properties of transparent TiO 2 film for Schottky photodetector are presented for the research article, entitled as "High-performing transparent photodetectors based on Schottky contacts" (Patel et al., 2017) [1]. The transparent photoelectric device was demonstrated by using various Schottky metals, such as Cu, Mo and Ni. This article mainly shows the optical transmittance of the Ni-transparent Schottky photodetector, analyzed by the energy dispersive spectroscopy and interfacial TEM images for transparency to observe the interface between NiO and TiO 2 film. The observation and analyses clearly show that no pinhole formation in the TiO 2 film by Ni diffusion. The rapid thermal process is an effective way to form the quality TiO 2 film formation without degradation, such as pinholes (Qiu et al., 2015) [2]. This thermal process may apply to form functional metal oxide layers for solar cells and photodetectors.
& The optical profile and the interfaces of the transparent Schottky device (NiO/TiO 2 /FTO) were analyzed.

Experimental features
Pure Ti film formed a quality TiO 2 film by rapid thermal process.

Data source location
Incheon National University, Incheon 406772, Korea Data accessibility The data are with this article

Value of the data
The data presents the transparent Schottky contact for the photodetector device. Rapid thermal process is effective to form the quality TiO 2 film without forming pinholes inside the layer [1].
Elemental analyses clearly show the abrupt junction formation through the interfaces. The data is useful to design for transparent photoelectric device applications, including solar cells, photodetectors, and transparent semiconductor fabrications.

Data
The datasets were acquired from the Schottky device of a thin Ni layer onto the TiO 2 film, which is a route for high-performing transparent photoelectric devices. The fluorine doped-Tin oxide (FTO) glass was used as a substrate, where FTO layer serves as a transparent conductor. A quality TiO 2 film was grown by rapid thermal process (RTP). Pure Ti film was initially coated on the FTO layer by sputtering method with 300 W onto a 4-in. Ti target (99.99%, iTASCO). After then RTP procedure was applied to transform TiO 2 film at 700°C for 10 min to ensure the transparency of Schottky type photodetector (Metal film/TiO 2 /FTO/glass). Various metal oxide films were formed by using different metal species, such as Cu, Mo and Ni. In order to investigate the stability of TiO 2 film, the fast diffusion Ni metal was studied for the phenomenon of intrusion into TiO 2 film. Fig. 1 and Fig. 2 are provided for the configuration of the transparent Schottky devices (Ni/TiO 2 /FTO/glass). The optical property was presented in Table 1. Fig. 3 and 4 give the quality of TiO 2 film and interfaces. By applying the RTP process, there is no serious degradation of TiO 2 layer without pinholes, different from the e-beam evaporation method [2].

Measurements
High-performing transparent Schottky photodetector was fabricated [1]. In order to observe the interfaces of the Schottky device (NiO/TiO2/FTO/Glass), a field-emission transmission electron microscope (FETEM, JEOL, JEM-2100F) was used. The TEM samples were prepared using a focused ion