Numerical dataset for analyzing the performance of a highly efficient ultrathin film CdTe solar cell

The article comprises numerical data of distinct semiconductor materials applied in the sketch of a CdTe absorber based ultrathin film solar cell. Additionally, the contact layer parametric values of the cell have been described also. Therefore, the simulation has been conducted with data related to the hetero-structured (n-ZnO/n-CdS/p-CdTe/p-ZnTe) semiconductor device and a J–V characteristics curve was obtained. The operating conditions have also been recorded. Afterward, the solar cell performance parameters such as open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), and efficiency (η) have been investigated and compared with reference cell.


Data format
Filtered and analyzed Experimental features A CdTe solar cell has been organized as n-ZnO/n-CdS/p-CdTe/p-ZnTe heterojunction. Therefore, based on the effects of layer thickness, band gap, doping concentration, refractive index, and others electrical and mechanical properties of the materials, the quantities of the performance parameters have been examined. Data accessibility Data are available inside the article

Value of the data
The physical dataset provides basic standard data for simulating a CdTe ultrathin film photovoltaic cell.
Researchers can go forward the theoretical analysis of a solar cell utilizing the same dataset Included dataset assists to compare and authorize the theoretical results of other models and approaches.
Dataset contributes to an elaboration of knowledge and finds new concept for CdTe cell analysis. The performance parameter dataset can be used to equate the future simulation in CdTe solar cell technology.

Table 3
Operating conditions based on which the simulation was carried out.

Cell structure of CdTe solar cell
The schematic design for CdTe solar cell has been visualized in Fig. 1. It consists of n-ZnO buffer/n-CdS window/p-CdTe absorber/p-ZnTe back surface field (BSF) layer with glass at the front contact and metal back contact. The simulation was conducted under AM1.5G illumination to explain the incident sunlight. Fig. 2(a) describes the energy band diagram using Anderson's electron affinity rule where the vacuum level has been used as the reference level. In Fig. 2(b), the Fermi level has been used as the reference level of the energy band diagram.

Performance measurement of CdTe solar cell
A one-dimensional simulation software, ADEPT/F 2.1 is employed to simulate the electrical characteristics of hetero-structured semiconductor device [11]. The optimized values of open circuit voltage (V oc ) and short circuit current (J sc ) for CdTe solar cell without BSF layer and with BSF layer have been measured from the J-V characteristic curve as depicted in Fig. 3(a) and (b) respectively. Accordingly, the optimum FF and η have been found out from the simulation result of the CdTe cell. All the data values reporting the performance of the optimized CdTe cell with respect to the reference cell are demonstrated in Table 4.