Dataset demonstrating the modeling of a high performance Cu(In,Ga)Se2 absorber based thin film photovoltaic cell

The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG) substrate/Mo back-contact/CIGS absorber/CdS buffer/intrinsic ZnO/Al-doped ZnO window/Al-grid front-contact, the solar cell performance parameters such as open circuit voltage (Voc), short circuit current density Jsc, fill factor (FF), efficiency (η), and collection efficiency ηc have been analyzed.


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The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG) substrate/Mo back-contact/CIGS absorber/CdS buffer/intrinsic ZnO/Aldoped ZnO window/Al-grid front-contact, the solar cell performance parameters such as open circuit voltage ðV oc Þ, short circuit current density J sc , fill factor ðFFÞ, efficiency ðηÞ, and collection efficiency η c have been analyzed.

Subject area
Applied physics More specific subject area Solar cell device physics Type of data

Data format Filtered and analyzed Experimental features
A CIGS solar cell has been structured as SLG/Mo/CIGS/CdS/i-ZnO/ZnO/ Al-grid stack. Afterwards, based on the impacts of band gap, thickness, doping concentration, and others mechanical and electrical properties of the materials the values of the performance parameters have been analyzed.

Data accessibility
Dataset is within the data article Value of the data The numerical data described in Table 1 provide the properties of the constituent materials used to design a CIGS solar cell.
Researchers could be able to use this dataset to design and analyze another theoretical model of a photovoltaic cell.
Analyzing these data, one can compare and ensure the validity of other simulation approaches and models.
The values of the performance parameters can be used to compare the simulation results of CIGS solar cell.

Device structure of CIGS thin film photovoltaic cell
The schematic design for CIGS absorber based solar cell has been depicted in Fig. 1. A soda lime glass (SLG) has been used as a substrate of the cell. After that, a stack of materials: Mo/Cu (In,Ga)Se 2 /CdS/i-ZnO/ZnO:Al/Al-grid was proposed for epitaxial growth on the substrate.

Performance analysis of CIGS solar cell
ADEPT 2.1 [10], an online device simulator, has been used to simulate the design and analyze the performance of the proposed cell. The performance parameters such as V oc and J sc of the cell has been measured from the J-V characteristic curve as depicted in Fig. 2. Consequently, the FF, η, and η c have been determined from the simulation outcome of the cell. All of these data describing the performance of the cell are presented in Table 4.