5.10 - Electronic and Optoelectronic Properties and Applications of Carbon Nanotubes

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We discuss the environment for future complementary metal-oxide semiconductor (CMOS) technology, and the pressure for improvements in this technology. The physical properties of carbon nanotubes including their structure and electrical properties are summarized. Since the existing CMOS technology is based on field effect transistors (FETs), the concept of an FET, the properties of carbon nanotube field effect transistors, and their use in integrated circuits are described. Carbon nanotube FETs (CNTFETs) also generate electroluminescence from band-to-band transitions. CNTFETs can operate as detectors where the absorption of light produces a photoresponse. We mention other potential applications of carbon nanotubes as interconnects, transparent contacts, etc. We close by describing some of the improvements in carbon nanotube technology that are required before carbon nanotubes can have a real impact on integrated circuit technology.

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Dr. J. C. Tsang did his undergraduate and graduate work at MIT, receiving a PhD in electrical engineering in 1973 and has been a member of the research staff at the IBM T. J. Watson Research Center since then. He has nine patents, 170 published papers, and four IBM Innovation awards.

He has contributed to the understanding of crystal symmetry forbidden phonon excitations in magnetic semiconductors, soft modes in charge density wave systems, surface enhanced Raman scattering, the interface between silicon and germanium in silicon germanium systems, and hot carrier processes in semiconductors. He was a developer of the PICA tool for the detection of failures in integrate circuits, and has explored the electrooptic properties of carbon nanotube transistors.

James Tsang is a fellow of the American Physical Society, and the American Association for the Advancement of Science, and a senior member of IEEE. He was an AAAS-Sloan Foundation Fellow in the White House Office of Science and Technology Policy and was a two-term member and ultimately chair of the American Physical Society’s Panel of Public Affairs. He led the APS response to the Nimov and Schon cases of research misconduct in 2002.

Phaedon Avouris received his BSc degree at the Aristotle University in Greece and his PhD degree in physical chemistry at Michigan State University in 1974. He did postdoctoral work at UCLA and was a research fellow at AT&T Bell Laboratories before joining the staff of IBM’s Research Division at the Watson Research Center in 1978. In 1984 he became manager of Chemical Physics and in 2004 he was elected IBM Fellow. He is currently manager of Nanoscience and Nanotechnology. He has also been adjunct professor at Columbia University and the University of Illinois.

His current research is focused on experimental and theoretical studies of the electrical, optical and optoelectronic properties of carbon nanotubes and graphene.

Dr. Avouris has published over 350 scientific papers. He has been elected fellow of the American Academy of Arts and Sciences, the APS, the Institute of Physics of the United Kingdom, the Academy of Athens, the IBM Academy of Technology, AAAS, New York Academy of Sciences and the American Vacuum Society. His awards include the APS Irving Langmuir Prize for Chemical Physics, the AVS Medard W. Welch Award for Surface Science, The Julius Springer Award for Applied Physics; and the Richard Feynman Nanotechnology Prize.

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