Modelling Ekman flow during the ACRT process with marked particles

doi:10.1016/S0022-0248(97)00384-9

Journal of Crystal Growth

Volume 183, Issues 1–2, 1 January 1998, Pages 140-149

https://doi.org/10.1016/S0022-0248(97)00384-9 Get rights and content

Abstract

The numerical method SOLA-VOF has been applied to the calculation of convection during the ACRT process. The Ekman flow is tracked with marked particles. The movement of the fluid adjacent to the crucible base induced by Ekman flow is shown clearly. The effects of crucible acceleration, maximum rotation rate and crucible diameter on the Ekman flow was studied. The numerical results are compared with those from siumlation experiments.

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Cited by (9)

Effect of accelerated crucible rotation on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon
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Citation Excerpt :
ACRT has been widely applied to improve the crystal quality by either improving the mixing of the liquid or achieving more diffusion controlled transport conditions in the liquid [3–8]. In a few numerical studies [9–17] the effect of ACRT on melt convection and segregation in crystal growth systems has been studied. The results show that the interaction between buoyancy and centrifugal forces is complex and strongly dependent on the operating system and design parameters.
We have performed axisymmetric, transient simulations of the vertical Bridgman growth of mc-silicon to study the effect of the accelerated crucible rotation technique (ACRT) on the melt flow and impurity segregation. A solute transport model has been applied to predict the final segregation pattern of impurities in a circular ingot. The sinusoidal ACRT rotation cycle considered here suppresses mixing in the melt near the center, resulting in diffusion-limited mass transport. Therefore the radial impurity segregation is increased towards the center. The effect of increased radial segregation is intensified for low values of the Ekman time scale.
Modelling of heat transfer in the melt volume during crystal growth by the Stockbarger method using ACRT
1999, Journal of Crystal Growth
The influence of the height of melt volume on temperature field in the melt is studied. The maximum velocity of ascending and descending flow has been determined for the Stockbarger growth using the ACRT for a crucible of 100 mm in diameter at Taylor number Ta>10⁸. The sharp increase in the amplitude of temperature fluctuations with decreasing height of the melt volume has been revealed. The increase in the amplitude of temperature fluctuations is caused by modulated crucible rotation. The ascending and descending flow velocity decreases on the axis of a cylindrical crucible with decreasing height of the melt volume.
Effects of ampoule rotation on vertical zone-melting crystal growth: Steady rotation versus accelerated crucible rotation technique (ACRT)
1999, Journal of Crystal Growth
Computer simulation is performed to illustrate the significance of ampoule rotation on the flows, interface shapes, and the growth rate in vertical zone-melting (VZM) crystal growth. For the growth of a 2 cm GaAs crystal in a quartz ampoule, simulation results show that even low-speed ampoule rotation can significantly affect the flows and further the growth interface. The concave growth front due to buoyancy convection can be inverted easily to a convex one by steady ampoule rotation. The accelerated crucible rotation technique (ACRT) also has a similar effect on the growth interface, but less effective. In addition, severe periodic growth and remelting is induced by ACRT, and it is enhanced significantly by natural convection.
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ACRT forced convection and its effects on solute segregation and heat and mass transfer during single crystal growth
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Modelling Ekman flow during the ACRT process with marked particles

Abstract

J. Crystal Growth

J. Crystal Growth

J. Crystal Growth

J. Crystal Growth

Progr. Crystal Growth Characterization

J. Crystal Growth

J. Crystal Growth

J. Crystal Growth

J. Crystal Growth

J. Crystal Growth