Classical semiconductorsNucleation and growth of GaSe on GaAs by Van der Waal epitaxy
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Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materials
2021, Progress in Quantum ElectronicsCitation Excerpt :Although there is a weak force in between to strain the films, it was found that the force is sufficient to make the rotational alignment between films and substrates. In another particular case of growing GaSe layered structures on GaAs reported by Lee E. Rumaner et al. [32], although the GaAs substrate was not passivated, it reacted with the coming flux to form GaSe and terminated the dangling bonds after the first monolayer of growth, which created a so-called “VDW-like” surface. Similarly, it is reported that GaSe can grow on Si substrates after forming a Si-Ga-Se VDW-like layer [29].
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2001, Computational Materials ScienceAngle-resolved X-ray photoelectron spectroscopic study of the interface chemistry between ultra-thin a-C overcoat and the magnetic layer on magnetic thin film disks
1999, Journal of Electron Spectroscopy and Related Phenomena
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Currently at: Intel Corporation, 2200 Mission College Blvd., Santa Clara, California 95052-8119, USA.
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Currently at: Intel Corporation, 3585 South West, Aloha, Oregon 97007-1299, USA.