Classical semiconductors
Nucleation and growth of GaSe on GaAs by Van der Waal epitaxy

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Abstract

Nucleation and growth of GaSe on GaAs(1 1 1)B substrate was studied to develop a better understanding of the Van der Waals epitaxy (VDWE) process. A complementary combination of RHEED, XPS, AFM and HREM were used. The initial GaAs(1 1 1)B surface reacts with incoming flux, forming a compound similar to GaSe at the surface. After one monolayer coverage, further growth of GaSe is on GaSe; the system changes from a heteroepitaxial to homoepitaxial system. Nucleation in the VDWE process is characterized by the formation of small oriented clusters with the weak Van der Waals bond dictating the orientation relationship. Further growth is found to be limited by surface kinetics, with a large diffusion barrier at the growing step edge. This barrier leads to islanding with the island shape dictated by the substrate temperature. A modified deposition procedure was developed to obtain uniform layer-by-layer growth of well-aligned flat GaSe domains without islanding.

References (18)

  • N.C. Fernelius

    Progr. Crystal Growth Characterization Mater.

    (1994)
  • Lee Evan Rumaner

    Nucleation and Growth in Van Der Waals Epitaxy

  • P.A. Lee
  • F. Levy
  • A. Bourdon et al.

    Phys. Rev. Lett.

    (1990)
    E. Bringuier et al.

    Phys. Rev. B

    (1994)
  • F.S. Ohuchi et al.

    J. Appl. Phys.

    (1990)
    F.S. Ohuchi et al.

    J. Crystal Growth

    (1991)
  • A. Koma et al.

    J. Vac. Sci. Technol. B

    (1985)
    A. Koma et al.

    Appl. Surf. Sci.

    (1989)
    K. Ueno et al.

    Appl. Phys. Lett.

    (1990)
  • A. Ludriksson et al.

    J. Crystal Growth

    (1995)
  • K. Ueno et al.

    Jpn. J. Appl. Phys. A

    (1991)
There are more references available in the full text version of this article.

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    Although there is a weak force in between to strain the films, it was found that the force is sufficient to make the rotational alignment between films and substrates. In another particular case of growing GaSe layered structures on GaAs reported by Lee E. Rumaner et al. [32], although the GaAs substrate was not passivated, it reacted with the coming flux to form GaSe and terminated the dangling bonds after the first monolayer of growth, which created a so-called “VDW-like” surface. Similarly, it is reported that GaSe can grow on Si substrates after forming a Si-Ga-Se VDW-like layer [29].

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1

Currently at: Intel Corporation, 2200 Mission College Blvd., Santa Clara, California 95052-8119, USA.

2

Currently at: Intel Corporation, 3585 South West, Aloha, Oregon 97007-1299, USA.

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