Growth and characterization of Si-doped diamond single crystals grown by the HTHP method

doi:10.1016/0925-9635(95)00449-1

Diamond and Related Materials

Volume 5, Issues 6–8, May 1996, Pages 866-869

https://doi.org/10.1016/0925-9635(95)00449-1 Get rights and content

Abstract

Synthetic diamond single crystals grown by the HTHP method were successfully doped with silicon. Various catalysts were used. The 1.68 eV Si centre was found only in specimens grown with N getters, and the best results were obtained with Fe-containing alloys. Photoluminescence from selected regions of the specimens showed that the presence of N excludes the presence of the Si centre and the intensity of the emission from the Si centre is not growth sector dependent.

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In comparison to the synthesis of diamond under sub-stable conditions – such as preparation using CVD – high-pressure and high-temperature (HPHT) methods synthesise crystals with a higher crystalline quality, providing a diamond with a more perfect crystal structure. In 1995, Sittas et al. successfully synthesized Si-doped diamonds under high temperature and pressure using the temperature gradient method [22]. More recently, it was demonstrated that even higher efficiency of Si incorporation in diamond is characteristic of new highly reduced systems based on the Mg catalyst [23–25].
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Growth and characterization of Si-doped diamond single crystals grown by the HTHP method

Abstract

J. Cryst. Growth

Diamond Relat. Mater.

Sov. Phys. Semicond.

Sov. Phys. Leb. Inst. Rep.

J. Mater. Res.

Surf. Coat. Technol.

J. Phys. Chem.