ARAMIS: an accelerator for research on astrophysics, microanalysis and implantation in solids

doi:10.1016/0921-5107(89)90100-1

Materials Science and Engineering: B

Volume 2, Issues 1–3, February 1989, Pages 217-221

https://doi.org/10.1016/0921-5107(89)90100-1 Get rights and content

Abstract

In this paper, we present a description of ARAMIS, the 2 MV high current implanter that we are building in our laboratory. The different parts of the machine are described with an emphasis on the original aspects of the machine. The present status of the construction is given.

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Cited by (26)

In-situ TEM irradiation creep experiment revealing radiation induced dislocation glide in pure copper
2021, Acta Materialia
In-situ TEM straining experiments were performed on pure copper to investigate the dislocation activity under heavy ion irradiation and high applied stress levels. The unpinning of dislocations from irradiation defects followed by glide was observed under irradiation at stress levels just below the critical stress for dislocation glide without irradiation. This phenomenon, unraveled for the first time in copper, has been statistically analyzed using digital image processing. Quantitative analysis of pinning lifetimes has been performed, suggesting that a cascade related mechanism is operative to explain the radiation induced dislocation glide. This work provides new insights on the irradiation creep deformation at high stress level.
Extended defect change in UO<inf>2</inf> during in situ TEM annealing
2020, Acta Materialia
Citation Excerpt :
The final chemical etching consists of a solution of nitric acid, glacial acetic acid and orthophosphoric acid at 120°C [23], allowing for reaching electron transparency. These UO2 thin foils were irradiated with 4 MeV gold ions using the Tandem accelerator ARAMIS [24] at the CSNSM laboratory (Centre de Sciences Nucléaires et de Sciences de la Matière in Orsay). Irradiation conditions were gathered in Table 1.
Predicting the nuclear fuel microstructure at each moment of its irradiation cycle (nominal, power transient, accidental conditions) is a significant nuclear safety issue. For that, it is necessary to understand the impact of irradiation parameters on the microstructure. This study provides insight about the temperature effect on dislocations. In situ thermal annealing up to 1400°C on pre-irradiated polycrystalline UO₂ thin foils was performed inside a TEM for the first time. The aim of the current study is to establish the kinetic and the mechanisms of thermal recovery of extended defects induced by irradiation.
Whatever the initial irradiation conditions, extended defect recovery was observed around 1000-1100°C, in good agreement with literature data. Dislocation line disappear mainly by climb and dislocation loops move by pencil glide along the <110> Burger vector directions. Defect growth by coalescence of dislocation loops is also observed.
Changes in voids induced by ion irradiations in UO<inf>2</inf>: In situ TEM studies
2020, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Citation Excerpt :
No voids are observed on the as prepared thin foil (Fig. 1). Then, 4 MeV Au2+ and 390 keV Xe3+ irradiations were performed on the UO2 thin foils with increasing fluences at several temperatures using the ARAMIS ion accelerator [11,12] and the IRMA ion implanter [13,14], respectively. These irradiations were followed in situ with a 200 kV TECNAI G2 20 Twin TEM (point resolution of 0.27 nm and LaB6 source), at the JANNuS-Orsay facility at the ‘Centre de Sciences Nucléaires et de Sciences de la Matière’ (CSNSM).
Transmission electron microscopy experiments coupled with 4 MeV Au and 390 keV Xe implantations were conducted on polycrystalline UO₂ thin foils in order to study the void change with damage, temperature (ranging from −180 to 1100 °C) and exogenous xenon atoms incorporation. Void size is weakly dependent on the ion dose in the range of [0.01–10] × 10¹⁴ i/cm², whereas void density increases strongly at the early beginning of irradiation and then saturates after 3–4 × 10¹³ i/cm². Change in void size and density are shown as weak functions of temperature and xenon atoms incorporation in these experimental conditions. These results indicate a heterogeneous void nucleation and a change monitored by ballistic effects. Studying voids is very tricky. This work also highlights the strong dependence of the measured void size on the TEM settings and capabilities. Thus, it is important to discuss only data obtained in the same conditions to derive influence parameters.
Full characterization of dislocations in ion-irradiated polycrystalline UO<inf>2</inf>
2017, Journal of Nuclear Materials
Citation Excerpt :
To obtain an electron transparent thin foil, mechanical thinning was performed using the tripod polishing technique followed by a chemical etching [11]. 4 MeV Au2+ and 390 keV Xe3+ irradiations were then performed on thin foils at different temperatures and fluences (as summarized in Table 2) using the accelerators ARAMIS [12] and the implanter IRMA [13,14], at the JANNuS-Orsay facility. An ion beam flux in the range of 1–2 × 1011 ions.cm−2.
In order to fully characterize the dislocation loops and lines features (Burgers vectors, habit/slip planes, interstitial or vacancy type) induced by irradiation in UO₂, polycrystalline thin foils were irradiated with 4 MeV Au or 390 keV Xe ions at different temperatures (25, 600 and 800 °C) and fluences (0.5 and 1 × 10¹⁵ ions/cm²), and further analyzed using TEM. In all the cases, this study, performed on a large number of dislocation loops (diameter ranging from 10 to 80 nm) and for the first time on several dislocation lines, reveals unfaulted prismatic dislocation loops with an interstitial nature and Burgers vectors only along the <110>-type directions. Almost 60% of the studied loops are purely prismatic type and lie on {110} habit planes perpendicular to the Burgers vector directions. The others lie on the {110} or {111} planes, which are neither perpendicular to the Burgers vectors, nor contain them. About 87% of the dislocation lines, formed by loop overlapping as fluence increases, are edge or mixed type in the <100>{100} slip systems, as those induced under mechanical load.
Evolution of extended defects in polycrystalline Au-irradiated UO<inf>2</inf> using in situ TEM: Temperature and fluence effects
2016, Journal of Nuclear Materials
Citation Excerpt :
According to these calculations at the final fluence of 1 × 1015 Au/cm2, the mean damage induced in the ROI (thickness of 100 nm) is equal to 5.6 dpa, which corresponds to few days in reactor, and the percentage of gold atom implanted per atom is about 0.0022%. The in situ irradiations with ion beams were carried out using the Tandem accelerator ARAMIS, coupled with a 200 kV TECNAI G2 20 Twin TEM, at the JANNuS-Orsay facility at the ‘Centre de Sciences Nucléaires et de Sciences de la Matière’ (CSNSM) [14] [15]. A liquid nitrogen and a high temperature sample holder were used in order to perform irradiations at −180 °C, and at 25 and 600 °C, respectively.
In situ Transmission Electron Microscopy irradiations were performed on polycrystalline UO₂ thin foils with 4 MeV gold ions at three different temperatures: 600 °C, room and liquid nitrogen temperature. In order to study the dislocation evolution and to determine the growth mechanisms, the dislocation loop and line densities and the loop size repartition were monitored as a function of fluence, and irradiation temperature. We show that dislocation loops, with Burgers vectors along the <110> directions, evolve into dislocation lines with increasing fluence by a loop overlapping mechanism. Furthermore, a fluence offset is highlighted between the irradiations performed at high and low temperature due to an increase of the defect mobility. Indeed, a growth by Oswald ripening is probably activated at room temperature and 600 °C and changes the kinetic evolution of loops into lines.
After this transformation, and for all the irradiation temperatures, a steady state equilibrium is reached where both extended defects (dislocation lines and small dislocations loops -around 5 nm in size-) are observed simultaneously. A continuous nucleation of small dislocation loops and of nanometer-sized cavities formed directly by irradiation is also highlighted.
Thermal annealing of disorder in Pb-ion irradiated SrTiO<inf>3</inf>
2004, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Citation Excerpt :
The other part was used either to check the crystallinity of the virgin host using Rutherford Backscattering Spectrometry in Channeling conditions (RBS-C) (χmin values obtained were around 2%), or to align the different crystallographic axes and planes along the analysing beam direction. The disorder levels were measured by RBS-C using a 1.6 MeV He-beam delivered by ARAMIS [7], a home made 2 MV tandem accelerator. The energy of 320 keV for Pb-ions was chosen instead of the average kinetic energy of α-recoil actinide nuclei (around 100 keV), to increase the thickness of the damaged layer at a value more convenient for RBS-C measurements without modification of the defect nature, as well as to increase the signal over noise ratio and to lower the importance of the surface effects.
Attention was paid to thermal annealing of defects in the SrTiO₃ lattice preliminary irradiated by Pb²⁺ ions which were used to simulate the recoil-nuclei during α-decay events in actinide waste forms. Two different types of defect depending upon Pb²⁺ irradiation fluence and annealing temperature were characterized with their activation energy and a prefactor related to the fraction recovered per second. Such thermal annealing data are necessary to predict the matrix behaviour under the storage conditions. Additional informations were obtained on the defect structure using Rutherford backscattering spectrometry in channeling condition. The measurement of the de-channeling yield along different axes and planes in the crystal has permitted to analyse partially the isolated defect structure.

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^☆: Paper presented at the Symposium on Deep Implants: Fundamentals and Applications at the E-MRS Spring Meeting, Strasbourg, May 31–June 2, 1988.

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ARAMIS: an accelerator for research on astrophysics, microanalysis and implantation in solids☆

Abstract

Nucl. Instrum. Methods

Nucl. Instrum. Methods A

Nucl. Instrum. Methods A

Rev. Gén. Élec.