Evidence for an excited level of the neutral indium acceptor in silicon☆
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Cited by (6)
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1980, Journal of LuminescenceCalculation of the mobility and the Hall factor for doped p-type silicon
1986, Physical Review BLuminescence study of thallium implanted silicon
1983, Journal of Applied PhysicsDetermination of relative impurity concentrations using photoluminescence: A case study of the Si: (B,In) system
1980, Applied Physics Letters
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Work supported in part by Advanced Research Projects Agency under contract no. DAAK70-77-C-0082.
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