Elsevier

Physics Letters A

Volume 70, Issue 1, 5 February 1979, Pages 52-54
Physics Letters A

Evidence for an excited level of the neutral indium acceptor in silicon

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Abstract

On the basis of the dependence of the photoluminescence on pump power, indium concentration and temperature we have determined that an excited level of the neutral indium acceptor exists 4.1 ± 0.1 meV above the ground state.

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Cited by (6)

  • Luminescence study of thallium implanted silicon

    1983, Journal of Applied Physics

Work supported in part by Advanced Research Projects Agency under contract no. DAAK70-77-C-0082.

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