Charge trapping in n-AlxGa1-xAs “insulators” and related device instabilities
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Cited by (10)
Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy
1989, Journal of Crystal GrowthDeep Centers in Semiconductors
2008, Handbook of Semiconductor Technology SetDeep Centers in Semiconductors
2008, Handbook of Semiconductor Technology: Electronic Structure and Properties of SemiconductorsA model for the current instabilities in GaAs-AlGaAs heterojunction
1996, Journal of Applied PhysicsEffect of nonequilibrium deep donors in heterostructure modeling
1993, Physical Review B
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