Charge trapping in n-AlxGa1-xAs “insulators” and related device instabilities

doi:10.1016/0169-4332(87)90073-0

Applied Surface Science

Volume 30, Issues 1–4, October 1987, Pages 52-63

https://doi.org/10.1016/0169-4332(87)90073-0 Get rights and content

Abstract

In some devices based on GaAs/Al_xGa₁-_xAs heterostructures, the Al_xGa₁-_xAs plays the role of a wide band gap “insulator”. These devices are therefore excellent systems for studying charge trapping in Al_xGa₁-_xAs. It is a poorly understood property of Al_xGa₁-_xAs that incorporation of any n-type dopant results in the formation of a deep electron trap, the DX center. Recent experiments on heterostructure devices have probed both thermal and athermal (hot electron) capture and emission by the DX center. By observing the trapping behavior as the composition (Al mole fraction) of the alloy is varied, the relationship between the trap level and the band structure of the host material has been clarified. A remarkable result is the observation of electron trapping at alloy compositions where the trap state is resonant with the conduction band.

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Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy
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The controlled doping of n- and p-type Al_xGa_1−xAs has been studied for the dopant elements, C, Zn, Si, and Sn. Both the incorporation characteristics and the electrical properties of these dopants are reviewed and discussed fo Al_xGa_1−xAs grown by th metal-organic vapor phase epitaxy (MOVPE) technique. The incorporation of Si from SiH₄ and Si₂H₆ is dominated by heterogeneous and homogenous reactions respectively and represents the best understood of the doping systems. Zinc and carbon both possess complex dependencies on the MOVPE growth system parameters. The electrical behavior of n-Al_xGa_1−xAs is dominated by the presence of the DX center. The relationship between this center and the electrical behavior of the material must be understood in order to properly characterize the doping behavior in Al_xGa_1−xAs layers and structures.
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Applied Surface Science

Charge trapping in n-AlxGa1-xAs “insulators” and related device instabilities

Abstract

IEEE Trans. Electron Devices ED-31

J. Appl. Phys.

Phys. Rev.

Japan. J. Appl. Phys.

Japan. J. Appl. Phys.

Phys. Rev.

Phys. Rev.

Appl. Phys. Letters

Semicond. Sci. Technol.

Japan. J. Appl. Phys.

J. Electron. Mater.

Phys. Status Solidi (b)

Phys. Rev.

Japan. J. Appl. Phys.

Japan. J. Appl. Phys.

Phys. Rev.

Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy

Deep Centers in Semiconductors

Deep Centers in Semiconductors

A model for the current instabilities in GaAs-AlGaAs heterojunction

Effect of nonequilibrium deep donors in heterostructure modeling

Lattice strain from DX centers and persistent photocarriers in Sn-doped and Si-doped Ga1-xAlxAs

Charge trapping in n-Al_xGa₁-_xAs “insulators” and related device instabilities