Reaction kinetics of the formation of indium tin oxide films grown by spray pyrolysis

doi:10.1016/0040-6090(90)90221-X

Thin Solid Films

Volumes 193–194, Part 2, 15 December 1990, Pages 696-703

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Abstract

The electrical and optical properties of sprayed indium tin oxide (ITO) films have been reported as a function of tin concentration, substrate temperature T_s and the substrate-nozzle distance D_sn^· D_sn and T_s seem to be interrelated for the optimization of good quality ITO films. Highly conduction (3 × 10⁵ ohm⁻¹m⁻¹) and transparent (90% in visible region) ITO films were obtained when D_sn = 0.3 m, T_s = 693 K with 5% by weight of SnCl₄ in the starting material. These data are discussed in the light of reaction kinetics.

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Furthermore, the deposition of ITO film involves the generation of a huge concentration of oxygen vacancies and alternate tin dopants, which leads to increased conductivity of the film [6]. There are various deposition techniques for synthesizing ITO films, such as; chemical vapor deposition (CVD) [7], electron-beam evaporation [8], magnetron sputtering [9–10], pulsed laser deposition (PLD) [11–12] and spray pyrolysis [13]. On the other hand, the ion-sensitive field effect transistor (ISFET) is the foremost electrochemical sensor to use MOSFET.
Even though several studies have demonstrated the use of Indium Tin Oxides (ITO) as an extended gate field effect transistor (EGFET), the effect of different doses of gamma radiation on the intrinsic properties of the ITO films has not been considered. This study investigates the effect of gamma irradiation on the structural, optical, morphological and electrical properties as well as pH sensitivity (as an extended gate field effect transistor) of ITO thin films. ITO thin films with thickness of 400 nm were prepared using a radio frequency sputtering technique. The samples were then subjected to various doses of gamma radiation from a Co-60 radio-isotope (0.5 kGy, 1 kGy, 1.5 kGy, and 2 kGy). The structural and morphological changes as well as transmission and absorption of the thin films were analyzed using X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Field-Emission Scanning Electron Microscope (FESEM) and UV–Vis spectrophotometry, before and after irradiation. The irradiated ITO thin films were then used as an extended gate field effect transistor to determine its ability to improve sensitivity as pH sensors. The grain size and transmittance in the range 300–900 nm of the ITO films were found to decrease with increasing gamma irradiation dose. In contrast, the uniformity and surface roughness of ITO thin films increased with increasing gamma radiation dose due to the formation of lattice defects. Moreover, the electrical resistance of the thin films increased with increasing dose because of the low current density and high number of surface defects associated with irradiation. The pH sensitivity of the ITO thin films improved after irradiation, possibly due to the concomitant increase in surface roughness with increasing radiation dose. The improvements in the pH sensitivity of ITO thin films after irradiation justify their potential use as pH sensors.
Influence of substrate temperature on structural and optical properties of ZnO thin films prepared by cost-effective chemical spray pyrolysis technique
2016, Superlattices and Microstructures
Over the past few decades semiconductor metal oxides have stimulated research interests owing to their important role in fundamental research and future applications in the field of energy conversion and sensors. So the present research work has been focused on the synthesis, growth mechanisms and physical properties of ZnO thin films prepared by cost-effective chemical spray pyrolysis technique. Desirable properties of thin films can be easily tailored by chemical spray pyrolysis technique by optimising the spray parameters. ZnO thin films were deposited on glass substrates with various substrate temperatures ranging from 573 K to 723 K. The influence of substrate temperature on structural, morphological and optical properties have been analyzed via XRD, SEM, UV–VIS–NIR spectroscopy, PL studies respectively. The Structural study reveals that all the spray deposited ZnO thin films have polycrystalline nature with preferential orientation along (100) plane. Optical studies show that the direct band gap values increases from 3.14 to 3.20 eV. PL studies shows that the intensity of emission peaks differ according to the substrate temperature. Smooth and uniform morphology obtained from SEM analysis. The optical transmittance observed in the visible region is more than 85% for all films other than 573 K as substrate temperature.
Thickness of ITO thin film influences on fabricating ZnO nanorods applying for dye-sensitized solar cell
2015, Composites Part B: Engineering
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Comparing to FTO and AZO, the ITO substrates show more advantages such as higher transparency, conductivity and binding strength, especially easier fabrication. Therefore it was considered as a good alternative substrate material for DSSC applications [22–26]. In this paper, it is first time to discover the relationship between the ITO substrates and as-deposited ZnO film, which further influenced the properties of morphology of ZnO nanostructures formed in reducing annealing method.
In order to compare the substrates influence on the properties of ZnO films and nanostructures, in this paper, the ITO substrates with different thicknesses were investigated.
ITO thin films of different thickness (200 nme500 nm) were deposited on glass substrates by DC sputtering, on which ZnO nanorods were fabricated from as-deposited ZnO films by reducing annealing method.
It was found that the structural and electrical properties of ITO films were significantly influenced by the ITO film thickness. The roughness of ITO films was increased with increase in thickness. The Hall mobility of ITO films was also increased with the increase of film thickness; in contrast, the resistivity was decreased. The highest Hall mobility of 29.2 cm²/V s and the lowest resistivity of 1.303 × 10⁻⁴ Ω cm were obtained from 500 nm-thick ITO film. The structural properties of ZnO nanorods were significantly influenced by the ITO film thickness. The density of ZnO nanorods gradually decreased with the increase in thickness of ITO film.
The overall conversion efficiency of demonstrated dye-sensitized solar cell was 2.11% with a fill factor 0.526, indicating high potential to be used as photoanodes in dye-sensitized solar cell applications.
ITO/Au/ITO multilayer electrodes for CuPc/C<inf>60</inf> solar cells
2012, Energy Procedia
The development of electrodes on polymeric substrates for organic electronics requires deposition at low temperatures, with a limited or no thermal treatment; a process which results in high resistivity materials. To achieve low resistivity films, we tested tri-layer anodes in organic solar cells. A significant improvement of the sheet resistance was obtained without compromising the optical properties. The sheet resistance depends on the gold layer thickness that must be ∼20 nm because of Au absorption. The use of an ITO(30nm)/Au(20nm)/ITO(30nm) anode in CuPc/C60-based photovoltaic cells yielded a clear enhancement of the fill factor leading to an improvement of efficiency.
On the structural, morphological, optical and electrical properties of sol-gel deposited ZnO:In films
2010, Thin Solid Films
Citation Excerpt :
Films are generally used as transparent electrodes or buffer layers. Different transparent conducting oxide films [1–5] were investigated, various deposition methods such as: oxidation [6,7], reactive evaporation [8,9], spray pyrolysis [10–12], sputtering [13,14], spray CVD [15–17] and numerous analysis both experimentally and theoretically, by numerical simulations [18,19] were employed in order to improve different deposition system configurations and films properties. ITO is the usual transparent conducting oxide electrode used in the third generation solar cells, however due to the high cost of these films and the induced problems of degradation, in the last few years a special attention was attributed to zinc oxide and especially to aluminium doped zinc oxide films.
Indium-doped zinc oxide thin films deposition was performed by the sol–gel technique using homogeneous and stable solutions of zinc acetate 2-hydrate and indium chloride in ethanol. Films were spin coated onto glass substrates. After drying and after a heat treatment at 450 °C, highly transparent (80%–90%) films were obtained. The effect on the structural, morphological, optical and electrical thin films properties of the dopant concentration was investigated. The temperature dependencies of the electrical conductivity under vacuum and in open atmosphere were analysed and discussed.
Opto-electronic properties of chromium doped indium-tin-oxide films deposited at room temperature
2008, Materials Science and Engineering: B
Indium–tin-oxide (ITO) doped chromium films were deposited on Corning 7059 glass prepared by radio frequency (RF) magnetron sputtering under various levels of sputtering power for the chromium target. Experimental results show that the surface roughness slightly decreases by co-sputtering Cr. The pure ITO films deposited at room temperature were amorphous-like. At 15 W of chromium target power, the structure of ITO: Cr film mainly consists of (2 2 2) crystallization plane, with minority of (2 1 1), (4 4 0), (6 6 2) crystallization planes. The carrier concentration of the ITO films increases with increasing the doping of chromium, however the mobility of the carrier decreases. When the sputtering power of the chromium target is at 7.5 W, there has a maximum carrier mobility of 27.3 cm² V ⁻¹ s ⁻¹, minimum carrier concentration of 2.47 × 10²⁰ cm⁻³, and lowest resistivity of 7.32 × 10⁻⁴ Ω cm. The transmittance of all the chromium doped ITO films at the 300–800 nm wavelength region in this experiment can reach up to 70–85%. In addition, the blue shift of UV–Vis spectrum is not observed with the increase of carrier concentration.

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