Elsevier

Thin Solid Films

Volumes 281–282, 1 August 1996, Pages 386-389
Thin Solid Films

Photoluminescence analysis of CdS thin films under phase transition

https://doi.org/10.1016/0040-6090(96)08621-XGet rights and content

Abstract

Using the chemical bath deposition (CBD) method, CdS thin films in the cubic metaslable phase were grown on glass substrates. On thermal annealing (TA) in Ar+S2 atmosphere in the 240–510 °C temperature range, the samples transform to the wurtzite phase. This hexagonal crystalline phase is the stable phase for CdS. From X-ray diffraction analysis the transition point from zincblende to wurtzite is found to occur in the 240–300 °C region. From photoacoustic absorption spectra the energy band gap Eg of the semiconductor was calculated. A plot of Eg vs. TA shows a minimum value (2.28 eV) at 300 °C, in the region of the transition point. Photoluminescence measurements, in the 1.40–2.60 eV emission energy range, show the ‘well known’ green emission band for the as-grown sample and for those annealed at high temperatures (360–510 °C). For samples annealed in the intermediate region (240 and 300 °C), a second band located at 2.2 eV is present. This band, denominated the yellow band and arising in the region of temperature of the transition point, is ascribed to Cd interstitials. A mechanism relating the Cd interstitials to the phase transformation is proposed.

References (20)

  • T. Nakanishi et al.

    Energy Mater. Sol. Cells

    (1994)
  • M. Agata et al.

    Solid State Commun.

    (1990)
  • C. Bocchi et al.

    Phys. Chem. Solids.

    (1975)
  • J. Britt et al.

    Appl. Phys. Lett.

    (1993)
  • I. Kaur et al.

    J. Electrochem. Soc.

    (1990)
  • H. Uda et al.

    Jpn. J. Appl. Phys.

    (1990)
  • A. Rautiainen et al.

    Mater. Res. Soc. Symp. Proc.

    (1991)
  • X.W. Wang et al.

    SPIE

    (1992)
  • X.W. Wang et al.
  • X.W. Wang et al.

    SPIE

    (1993)
There are more references available in the full text version of this article.

Cited by (69)

  • Dopant mediated augmentation of nanotwinning and anomalous emission behaviour

    2023, Journal of Luminescence
    Citation Excerpt :

    The origin of G peak in CdS is well described in literature and is attributed to the collective contribution of the transition of S- vacancy donors (Vs+) to the VB and CB to S-interstitial (Is−) as well as the twinning interface [16,47,56,64]. In contrast, the yellow emission results from the transitions from donor levels i.e. Cd atoms located in interstitial sites (ICd) to the VB [53,56,65–67] or the transition from interstitial cadmium-cadmium vacancy complexes (ICd − VCd) which is a donor to acceptor level transition [53,56,65–68]. Here, both type of the transitions are believed to responsible for the GY emission.

  • Swift heavy ion irradiation induced modifications in electron beam deposited CdS thin films

    2022, Journal of Alloys and Compounds
    Citation Excerpt :

    At higher fluences, drastic intensified yellow emission is realized and ascribed to the creation of ICd or ICd-Vcd Frenkel pair defects as Cd atoms approach one minimum to adjacent lower minima as a consequence of the electronic inspired movement. Literature proposed that the dislocation of Cd atoms is more comfortable than S atoms for interstitial positions; implying that Cd atoms have lower energy bound as compared to S atoms in CdS lattice under high electronic energy [42,43]. Bocchi and Ghezzi reported that the interaction between two similar S (S-S) atoms are quite stronger than the two similar Cd (Cd-Cd) atoms [44].

  • Effect of the sulfur and fluorine concentration on physical properties of CdS films grown by chemical bath deposition

    2017, Results in Physics
    Citation Excerpt :

    With the CBD technique is difficult to balance the stoichiometry of the synthesized films, therefore the red signal peaked at 1.8 eV shown in Fig. 4 corresponds to sulfur vacancies in agreement with literature [14]. The second signal observed at shorter wavelengths, referred as the green band, can be found in literature centered at different energy positions from 2.27 eV to 2.40 eV in single crystals and polycrystalline thin films [11,12,14]. The green band has its origin in radiative transitions due to sulfur vacancies near the bottom of the conduction band to the top of the valence band, radiative recombination between donor acceptor pairs as long as second ionization states of sulfur vacancies.

View all citing articles on Scopus
*

Permanent address: Optoelectronic Postgrade, Facultad de Ciencias Físico-Matemáticas, Puebla University, Mexico.

View full text