Photoluminescence analysis of CdS thin films under phase transition
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Cited by (69)
Dopant mediated augmentation of nanotwinning and anomalous emission behaviour
2023, Journal of LuminescenceCitation Excerpt :The origin of G peak in CdS is well described in literature and is attributed to the collective contribution of the transition of S- vacancy donors (Vs+) to the VB and CB to S-interstitial (Is−) as well as the twinning interface [16,47,56,64]. In contrast, the yellow emission results from the transitions from donor levels i.e. Cd atoms located in interstitial sites (ICd) to the VB [53,56,65–67] or the transition from interstitial cadmium-cadmium vacancy complexes (ICd − VCd) which is a donor to acceptor level transition [53,56,65–68]. Here, both type of the transitions are believed to responsible for the GY emission.
Swift heavy ion irradiation induced modifications in electron beam deposited CdS thin films
2022, Journal of Alloys and CompoundsCitation Excerpt :At higher fluences, drastic intensified yellow emission is realized and ascribed to the creation of ICd or ICd-Vcd Frenkel pair defects as Cd atoms approach one minimum to adjacent lower minima as a consequence of the electronic inspired movement. Literature proposed that the dislocation of Cd atoms is more comfortable than S atoms for interstitial positions; implying that Cd atoms have lower energy bound as compared to S atoms in CdS lattice under high electronic energy [42,43]. Bocchi and Ghezzi reported that the interaction between two similar S (S-S) atoms are quite stronger than the two similar Cd (Cd-Cd) atoms [44].
Opto-dielectric-nonlinear properties of Na–Zn–CdS alloys nanostructure thin films: Role of Zn doping
2020, Physica B: Condensed MatterEffect of the sulfur and fluorine concentration on physical properties of CdS films grown by chemical bath deposition
2017, Results in PhysicsCitation Excerpt :With the CBD technique is difficult to balance the stoichiometry of the synthesized films, therefore the red signal peaked at 1.8 eV shown in Fig. 4 corresponds to sulfur vacancies in agreement with literature [14]. The second signal observed at shorter wavelengths, referred as the green band, can be found in literature centered at different energy positions from 2.27 eV to 2.40 eV in single crystals and polycrystalline thin films [11,12,14]. The green band has its origin in radiative transitions due to sulfur vacancies near the bottom of the conduction band to the top of the valence band, radiative recombination between donor acceptor pairs as long as second ionization states of sulfur vacancies.
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Permanent address: Optoelectronic Postgrade, Facultad de Ciencias Físico-Matemáticas, Puebla University, Mexico.