Elsevier

Surface Science

Volume 286, Issue 3, 1 May 1993, Pages 261-274
Surface Science

Surface topography changes induced by chemical vapor deposition of aluminum on Al(111)

https://doi.org/10.1016/0039-6028(93)90410-LGet rights and content

Abstract

Aluminum was deposited by chemical vapor deposition (CVD) on an Al(111) surface, using trimethylamine alane (TMAA). The precursor dissociates on the surface and the products (trimethylamine and hydrogen) desorb at temperatures in excess of 350 K. Surface topographical changes are observed during the CVD process by thermal energy atomic helium scattering. Growth at 400 K proceeds by a step-flow mechanism.

References (22)

  • M.E. Gross et al.
  • J. Duan et al.

    Surf. Sci.

    (1992)
  • R.B. Doak
  • A short surface anneal is adequate to reproduce the starting conditions of the experiment. A similar situation has been...
  • T.-M. Lu et al.

    Surf. Sci.

    (1982)
  • M. Henzler

    Surf. Sci.

    (1978)
  • J.L. Vossen et al.J.L. Vossen et al.
  • G.B. Stringfellow

    Organometallic Vapor-Phase Epitaxy: Theory and Practice

    (1989)
  • L.H. Dubois et al.

    Surf. Sci.

    (1990)
  • R. Kunkel et al.

    Phys. Rev. Lett.

    (1990)
    J.E. Parameter et al.

    Vacuum

    (1990)
    B. Poelsema et al.

    Appl. Phys.

    (1991)
  • J. Ferron et al.

    Surf. Sci.

    (1989)
  • Cited by (0)

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