Computer simulation of conductivity and Hall effect in inhomogeneous inversion layers
References (11)
Surface Sci.
(1976)- et al.
Solid State Commun.
(1975) - et al.
- et al.
Phys. Rev. Letters
(1974) Appl. Phys. Letters
(1974)
There are more references available in the full text version of this article.
Cited by (12)
High resolution observation of defects at SiO<inf>2</inf>/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy
2018, Microelectronics ReliabilityCitation Excerpt :We think that one of the possible candidates for the observed non-uniformities may be associated with C-related defects, which were investigated in previous studies on SiO2/4H-SiC interfaces [16,19]. We note that it is likely that the observed charge non-uniformities at the SiO2/SiC interfaces influence the carrier transport characteristics of SiC-MOSFETs because it is known that the non-uniformities of the interfacial charges degrade the carrier transport in the inversion layer of Si-MOS transistors [20–22]. To investigate the spatial resolution of tr-SNDM, distribution of trap occupation function at the SiO2/SiC interface during the tr-SNDM measurements were calculated using a TCAD simulator (ATLAS).
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