ReviewThe effect of hot-electron injection on the properties of flicker noise in n-channel MOSFETs
References (25)
- et al.
Solid-St. Electron.
(1988) - et al.
J. appl. Phys.
(1989) - et al.
IEEE Electron Devices Lett.
(1989) - et al.
IEEE Trans. Electron Devices
(1987) - et al.
IEEE Trans. Electron Devices
(1988) - et al.
IEEE Trans. Electron Devices
(1988) - et al.
IEEE Electron Device Lett.
(1986) - et al.
IEEE Electron Device Lett.
(1988)
IEEE Electron Device Lett.
(1989)
IEDM Tech. Dig.
(1987)
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