Si/transition-metal Schottky barriers: Fermi-level pinning by Si dangling bonds at interfacial vacancies

doi:10.1016/0038-1098(84)90548-9

Solid State Communications

Volume 49, Issue 1, January 1984, Pages 1-5

https://doi.org/10.1016/0038-1098(84)90548-9 Get rights and content

Abstract

The Schottky barriers formed by deposition of transition metals on Si surfaces are explained in terms of Fermi-level pinning by Si dangling bonds that are sheltered by vacancies at Si/transition-metal-silicide interfaces.

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Si/transition-metal Schottky barriers: Fermi-level pinning by Si dangling bonds at interfacial vacancies

Abstract

Phys. Rev. Letters

Thin Solid Films

J. Phys. Chem. Solids

Phys. Rev. Letters

Thin Solid Films

J. Vac. Sci. Technol. XX

Phys. Rev.

J. Vac. Sci. Technol. B

Phys. Rev. Letters

Solid State Commun.

Phys. Rev. Letters

Applied Phys. Letters

J. Phys.

J. Vac. Sci. Technol.

Phys. Rev.

Solid State Commun.

J. Vac. Sci. Technol.

Phys. Rev.

Surf. Sci.

Inst. Phys. Conf. Ser.