Importance of electron-phonon processes in the inelastic lifetime of conduction electrons

doi:10.1016/0038-1098(83)90668-3

Solid State Communications

Volume 46, Issue 4, April 1983, Pages 347-349

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Abstract

The temperature of conduction electrons can be raised above the lattice temperature by a high electric current density. The achieved temperature difference is proportional to the electron-phonon relaxation time. Weak localization yields information about the electron temperature and allows the conclusion that electron-phonon processes are an essential determinant for the inelastic lifetime of the conduction electrons.

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Cited by (18)

Electron weak localization in disordered films
1997, Physica A: Statistical Mechanics and its Applications
The logarithmic temperature dependence of resistivity, commonly observed in disordered films, has generally been interpreted as evidence for electron weak localization, with its slope indicative of the inelastic scattering mechanism. In this work, we show that the 2D quantum percolation (QP) model, pertaining to disordered metallic films, predicts a sample-size dependent lnL conductance correction that is three times larger than that for the Anderson model. Moreover, when the film has a finite thickness, the coefficient of lnL decreases to about $23$ of its 2D value for both the QP and the Anderson models. Since for disordered metallic films the QP model is more realistic than the Anderson model, which pertains to doped metallic films, it follows that many prior experimental results on metallic films have to be re-interpreted in regard to their implications about the inelastic scattering mechanism(s). These results have direct implications for the interpretation of experimental data.
Electric field heating of supported and free-standing AuPd fine wires
1986, Solid State Communications
The electrical properties of supported and free-standing AuPd wires of dimensions 8 μm × 50 × 30 nm have been studied. The low temperature resistance rise observed for the supported wire is described in terms of one dimensional Coulomb interactions with a screening parameter F≈ $12$ . The resistance rise of the free standing wire, however, shows a more two dimensional behaviour. In both cases the resistance change as a function of temperature has been used as a thermometer to measure the electron temperature in the study of energy loss from an electron system heated by an electric field. It is found that for a supported wire the energy loss is limited by the electron-phonon scattering rate which is proportional to the square of the electron temperature. For a free standing wire the heat loss is limited by the diffusion of electrons and phonons along the wire. It is shown that a material independent model can be used to explain the data and that from these experiments there is no evidence for the effects of reduced dimensionality phonons.
Electron-phonon interaction and screening effects in quasi-two-dimensional electron systems
1984, Surface Science
Aspects of electron-phonon interaction and screening effects in quasi-two-dimensional electron systems (e.g. inversion and accumulation layers; semiconductor heterostructures and superlattices) are reviewed with particular emphasis on recent developments. Theoretical and experimental results are compared where ever possible. Differences with the bulk three-dimensional systems are pointed out and prospects for future theoretical efforts are outlines.
Weak localization in thin films. a time-of-flight experiment with conduction electrons
1984, Physics Reports
The resistance of two-dimensional electron systems such as thin disordered films shows deviations from Boltzmann theory, which are caused by quantum corrections and are called “weak localization”. Theoretically weak localization is originated by the Langer-Neal graph in the Kubo formalism. In this review article the physics of weak localization is discussed. It represents an interference experiment with conduction electrons spl into pairs of waves interfering in the back-scattering direction. The intensity of the interference (integrated over the time) can be easily measured b the resistance of the film. A magnetic field introduces a magnetic phase shift in the electronic wave functionand suppresses the interference after a “flight” time proportional to 1/H. Therefore the application of a magnetic field allows a time-of-flight experiment with conduction electrons. Spin-orbit scattering rotates the spin of the electrons and yields an observable destructive interference. Magnetic impurities destroy the coherence of the phase. The experimental results as well as the theory is reviewed. The role of the spin-orbit scattering and the magnetic scattering are discussed. The measurements give selected information about the inelastic lifetime of the conduction electrons in disordered metals and raise new questions in solid state physics. Future applications of the method of weak localization are considered and expected.
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2010, International Journal of Modern Physics B
Weak localization and its applications as an experimental tool
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Importance of electron-phonon processes in the inelastic lifetime of conduction electrons

Abstract

Solid State Commun.

Phys. Rev.

Prog. Theor. Phys.

J. Phys. Soc. Japan

Z. Phys.

Phys. Rev. Lett.

Phys. Rev. Lett.