Dependence of the saturation intensity of p-type germanium on impurity concentration and residual absorption at 10.59 μm
References (12)
- et al.
Appl. Phys. Lett.
(1972) - et al.
Optics Lett.
(1977) - et al.
IEEE J. Quant. Electron. QE-13
(1977) IEEE J. Quant. Electron. QE-12
(1976)- et al.
Phys. Rev. Lett.
(1979)
There are more references available in the full text version of this article.
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