Two-dimensional electron gas at a semiconductor-semiconductor interface

doi:10.1016/0038-1098(79)91010-X

Solid State Communications

Volume 29, Issue 10, March 1979, Pages 705-709

https://doi.org/10.1016/0038-1098(79)91010-X Get rights and content

Abstract

We report the first observation of a two-dimensional electron gas at a semiconductor-semiconductor (GaAs-AℓGaAs) interface. A novel, high-mobility, persistent-photoconductive effect allows one to vary the two-dimensional carrier concentration continuously from 1.1 × 10¹² cm⁻² to 1.6 × 10¹² cm⁻², as obtained by Shubnikov-deHaas measurements. Cyclotron resonance data establish an effective mass of 1.11 m^☆_b, where m^☆_b is the mass at the conduction-band edge of GaAs. Hall data and cyclotron resonance yield a mobility of μ ≈ 5000 cm²/Vsec.

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Two-dimensional electron gas at a semiconductor-semiconductor interface

Abstract

Solid State Communications

Physical Review

Applied Physics Letters

Physical Review Letters

Physical Review B

Applied Physics Letters