Two-dimensional electron gas at a semiconductor-semiconductor interface
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Identification of electronic dimensionality reduction in semiconductor quantum well structures
2024, Journal of Electron Spectroscopy and Related PhenomenaNovel materials-based devices to mitigate challenges
2023, Nanoelectronics: Physics, Materials and DevicesInfluence of pulsed laser deposited hafnium oxide thin film as gate dielectric on the fabrication of Al<inf>0.1</inf>Ga<inf>0.9</inf>N/GaN MOS-HEMT
2023, Materials Science in Semiconductor ProcessingCitation Excerpt :Electrons confined in the potential well are named 2-dimensional electron gas (2-DEG). The 2DEG character of electrons near the Al0.1Ga0.9N/GaN interface has been well established by Stormer et al., 1979 [100]. But the gate leakage is more controlled by inserting an oxide (i.e HfO2) layer between Al0.1Ga0.9N and the metal electrode (gate).
High-Al-content heterostructures and devices
2021, Semiconductors and SemimetalsCitation Excerpt :For AlGaN, the saturation velocity depends on the alloy composition, but the dependence is weaker than that of the mobility. The high electron mobility transistor (HEMT) illustrated in Fig. 2 is a typical lateral device and is usually said to separate regions of electron conduction from regions of ionized impurities to improve the transport properties (Mimura, 2002; Stoermer et al., 1979). Such impurity-free conduction leads to the increase of electron mobility as in the “EMT” part of the acronym.