Vibrational spectra of vapor-deposited binary phosphosilicate glasses

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Abstract

Room temperature infrared transmission spectra in the range 4000-250 cm−1 of binary phosphosilicate glass (PSG) films deposited by reacting argon- or nitrogen-diluted PH3SiH4O2 mixtures on heated silicon substrates at 300–400° C have been obtained across the whole composition range. In all the as-deposited binary films, an absorption at ≈1300 cm−1 characteristics of the P=O vibration was found to persist, together with a couple of broad absorptions in the regions 1200-900 cm−1 and 500 cm−1. Using a differential infrared technique the broad feature in the higher frequency region has been resolved into two well-defined bands at ≈1100 and 970 cm−1. A detailed analysis shows that the intensity variation of the differential band at ≈1100 cm−1 conforms well, at least to 50 mol% P2O5, to a simple structural model that yields an analytic distribution of POSi linkages as a function of composition by assuming chemical mixing in the vapor-deposited P2O5SiO2 system. Furthermore, the system may be written as (P=O)2 O3SiO2 in order to emphasize the similarity of its coordination scheme with that of the B2O3SiO2 system studied earlier. The nature of these CVD films has also been elucidated by thermal and water treatments.

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