The quest for fast phase change materials
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Cited by (18)
Phase change memory based on SnSe<inf>4</inf> alloy
2013, Thin Solid FilmsCitation Excerpt :A microscopic investigation of crystallization kinetics with a static tester and an atomic force microscope has demonstrated that for different alloy compositions recrystallization proceeds either via growth from the crystalline rim or by nucleation and growth of critical nuclei. To determine the mechanism of crystallization, a combination of microscopic measurements, mainly employing a static tester and an atomic force microscope, are combined with macroscopic measurements such as, X-ray diffraction, X-ray reflectivity and optical reflectance measurements [7]. Metal chalcogenides offer a range of optical band gaps suitable for various optical and optoelectronic applications.
The interaction between electron beam and amorphous chalcogenide films
2012, Journal of Non-Crystalline SolidsCitation Excerpt :A growing interest can be witnessed currently in the research of chalcogenide glasses (ChG), which is, to much extent, caused by newly opened fields of applications for these materials. Applications in phase-change memories [1,2] and in detectors for medical imaging [3] and electron beam (EB) lithography seem most remarkable. Today the study of interaction between ChG and EB is an actual task; a number papers have been published on EB induced reliefs in stoichiometric [4] and non-stoichiometric [5,6] As-S thin films, experimental results on electron beam induced reliefs in Ge–Se [7], Sb–S [8] and Sb–Se [9] thin films, investigation of recording on Se/As2S3 and Sb/As2S3 nano-layered structures [10].
In situ AFM and Raman spectroscopy study of the crystallization behavior of Ge <inf>2</inf> Sb <inf>2</inf> Te <inf>5</inf> films at different temperature
2011, Applied Surface ScienceCitation Excerpt :The understanding of the crystallization process is of great importance for the preparation of Ge2Sb2Te5 films and the erasing of data. The structure and morphology differences between crystalline and amorphous phases of Ge2Sb2Te5 films have been extensively studied using X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, and atomic force microscope (AFM) [1,3–12]. Most of them detected the structure and morphology of crystalline Ge2Sb2Te5 films at room temperature (RT).
Confocal spectromicroscopy of amorphous and nanocrystalline tungsten oxide films
2007, Journal of Non-Crystalline SolidsInfluence of deposition parameters on the properties of sputtered Ge <inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> films
2005, Thin Solid FilmsCitation Excerpt :Reversible optical data storage using phase change recording is based on the different optical properties of the crystalline and amorphous structure of the phase change material. The pronounced optical contrast between the amorphous and the crystalline state of the material, which is usually a ternary or quaternary Te alloy, enables a straightforward reading of the information in optical data storage [1–3]. This change of optical properties is based upon a narrowing of the band gap in the crystalline phase.