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TFT Structure Simulation with Various High K Dielectric Materials for Non-volatile Memory Device

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Abstract

In this rapidly growing and changing world of electronics industry it is very critical to have precise model and simulation for device. This paper presents the work on simulating the performance of thin film transistors (TFT) structure with different high K dielectric materials and source drain materials. TFT structure plays an important role in the TFT performance and this paper compares the ID–VD and ID–VG, threshold voltage (VT), subthreshold swing and on and off current (Ion/Ioff) of the TFT. Further, for a bottom gate staggered configuration, the effect of different materials as Source and Drain as well as the effect of dielectric strength on the tunneling layer of the TFT is studied to evaluate its suitability for applications like non-volatile memory. The effect of temperature on different performance characteristics of the bottom gate TFT structure like threshold voltage, sub-threshold swing, on–off current ratio are also analysed.

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Authors and Affiliations

  1. Department of ECE, RV College of Engineering, Bengaluru, India

    Keka Mukhopadhyaya & P. Srividya

  2. Visvesvaraya Technological University, Belagavi, Karnataka, 590018, India

    Keka Mukhopadhyaya & P. Srividya

  3. Department of ECE, CMR Institute of Technology, Bengaluru, Karnataka, India

    Keka Mukhopadhyaya

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  1. Keka Mukhopadhyaya
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  2. P. Srividya
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Mukhopadhyaya, K., Srividya, P. TFT Structure Simulation with Various High K Dielectric Materials for Non-volatile Memory Device. Trans. Electr. Electron. Mater. 25, 255–264 (2024). https://doi.org/10.1007/s42341-023-00502-3

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