Abstract
This study reports on spectroscopic ellipsometry (SE) and optical dispersion analysis of chemically deposited CdS thin films. The CdS thin films were prepared using chemical bath deposition and annealed in N2 atmosphere at temperatures of 100, 200, 300, and 500 °C for 60 min. The optical constants of nanocrystalline CdS thin films were investigated with SE. The ellipsometric parameters of the CdS thin films were measured with SE in the photon energy range from 1.24 to 6.48 eV. To investigate the dispersion parameters, the dispersion of the refractive index of the thin films was analyzed using the Wemple–DiDomenico single-oscillator model (W–D model) and the Sellmeier model. The optical dispersion parameters of the oscillator energy, the dispersion energy, the average oscillator strength, and the average oscillator wavelength of CdS thin films were investigated. In addition, dispersion parameters of CdS thin films were investigated as a function of the annealing temperature. The dispersion parameters of CdS thin films by the W–D model and Sellmeier model change with annealing temperature, which causes the transformation of the crystal structure.
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Acknowledgements
The transmission of CdS thin films were measured at the Korea Basic Science Institute (KBSI). The author would like to thank W. S. Soun of the National Nanofab Center for technical assistance in the spectroscopic ellipsometry measurements.
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Park, WD. Spectroscopic Ellipsometry and Optical Dispersion Analysis of Nanocrystalline CdS Thin Films. Trans. Electr. Electron. Mater. 19, 261–266 (2018). https://doi.org/10.1007/s42341-018-0059-z
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DOI: https://doi.org/10.1007/s42341-018-0059-z