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RF-MEMS capacitive switches: enabling transition towards 5G/B5G applications

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Abstract

This paper presents design and analysis of radio frequency microelectromechanical (RF-MEMS) shunt capacitive switch for millimeter wave (mmWave) frequencies. The device performance is tuned at high frequencies to meet the criteria of 5G and beyond, the pillar of all current technology paradigms. The research investigation reveals that independent optimization of electromagnetic and electromechanical performance of switch for specific applications is a major issue. However, the proposed device met all the desired specifications with a novel capacitive shunt topology using separate DC-biasing electrodes and RF signal lines. According to the finite element method (FEM) study the switch has offered on-state losses of 0.2 dB for frequencies below 30 GHz and maximum isolation of 46.3 dB at 24.5 GHz. Electromechanical analysis shows that a low pull-in voltage of 1.9 V and a switching time 107.7 µs are required to switch on and off the transmission of the signal. The simulation results showed the suitability of the RF-MEMS switch for the FR2 band allocated for 5G/B5G applications.

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Acknowledgements

Authors would like to give their sincere thanks to CSIR-Central Electronics Engineering Research Institute, Pilani for providing software help to complete this work.

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  1. Electronics and Communication Engineering NIT Hamirpur, Hamirpur, Himachal Pradesh, India

    Raj Kumari & Mahesh Angira

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  1. Raj Kumari
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Correspondence to Raj Kumari.

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Kumari, R., Angira, M. RF-MEMS capacitive switches: enabling transition towards 5G/B5G applications. Int. j. inf. tecnol. 15, 3889–3897 (2023). https://doi.org/10.1007/s41870-023-01457-7

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