Abstract
Low-dimensional molybdenum disulfide (MoS2) is a versatile platform for ultrathin electronic, optoelectronic, and quantum devices, owing to the unique properties emerged in the reduced dimensionality. However, it remains challenging to develop facile synthesis methods for explicit control of their morphology and dimensionality. Herein, a simple and cost-effective method is developed for fast and controllable synthesis of monolayer MoS2 nano-microribbons. A mixed aqueous solution of Na2MoO4 and NaOH was spin-coated on a sapphire substrate and sulfurated via a one-step chemical vapor deposition. NaOH concentration can control the morphology and orientation distribution of MoS2, while the growth time can control the thickness of MoS2. Notably, high-quality monolayer MoS2 nano-microribbons with aspect ratios over 100 and widths as narrow as 200 nm were successfully synthesized, as confirmed by optical microscopy, scanning electron microscopy, atomic force microscopy, and Raman and photoluminescence spectroscopies. In addition, a phototransistor was fabricated based on the monolayer MoS2 nano-microribbons, demonstrating an excellent current on/off ratio of 9 × 105, a high photo-to-dark current ratio of 105, and a strong responsivity of 8.6 A W−1. Therefore, this work presents an alternative pathway for the synthesis of high-aspect-ratio MoS2 ribbons, which could inspire their applications for ultrathin electronic and optoelectronic devices.
摘要
本文报道了一种快速、可控合成单层MoS2纳米-微米带的方法: 通过在蓝宝石衬底上旋涂Na2MoO4和NaOH的混合溶液后一步化学气相沉积硫化的方式进行生长. 其中, 通过改变NaOH的浓度, 对气-液-固生长过程中的反应物液滴流动性进行调控, 我们实现了对所获得的MoS2的形貌和取向的调控; 同时, 通过改变生长时间, 可以实现对MoS2层数的调控. 利用这种方法, 我们获得了最窄宽度仅为200 nm, 纵横比超过100的单层MoS2纳米-微米带, 且表征证明其具有很高的晶体质量. 同时, 我们还用该MoS2纳米带作为沟道材料, 制备了光电晶体管, 测试表明其具有高达9 × 105的电流开/关比、 超过105的光暗电流比以及高达8.6 A W−1的响应度, 展现了其在电子和光电子器件中的应用潜力.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (62174063, 62174061, and 61974174), the National Key Research and Development Program of China (2022YFB3605104), the Key Research and Development Program of Hubei Province (2021BAA071), the Natural Science Foundation of Hubei Province (2022CFB011), the Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (IIMDKFJJ-21-07), and the Fundamental Research Funds for the Central Universities (2020kfyXJJS124).
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Author contributions Jian P designed the experiments. Jian P grew the samples with the assistance of Liu W and Xu D. Jian P, Tan S and Zhao Y fabricated the devices and performed the measurements. Jian P wrote the paper with support from Wu F and Chen C. Zheng Z, Wang P and Dai J provided useful suggestions and guidance on the manuscript. All authors discussed and commented on the manuscript. The manuscript was written through contributions of all authors. All authors have given approval to the final version of the manuscript.
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Pengcheng Jian is currently a PhD student at Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology (HUST). He received his BE degree from the School of Optical and Electronic Information, HUST in 2020. His current research mainly focuses on the growth of 2D materials and their applications in optoelectronics.
Feng Wu received his BS and PhD degrees in optics engineering from HUST in 2012 and 2017, respectively. Currently he is an associate professor at Wuhan National Laboratory for Optoelectronics, HUST. His research interests focus on the growth and characterization of wide-bandgap semiconductors and 2D materials, and the corresponding optoelectronic devices such as light-emitting diodes, lasers and photodetectors.
Changqing Chen is a professor at Wuhan National Laboratory for Optoelectronics, HUST. He received his PhD degree in 2000 from the University of Erlangen-Nürnberg. His research interests mainly focus on the epitaxy and optoelectronic applications of wide-bandgap semiconductor materials.
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Jian, P., Tan, S., Zheng, Z. et al. Controllable synthesis of high-aspect-ratio monolayer MoS2 nano-microribbons for high-performance phototransistors. Sci. China Mater. 66, 3941–3948 (2023). https://doi.org/10.1007/s40843-023-2569-8
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DOI: https://doi.org/10.1007/s40843-023-2569-8