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Effects of Nitridation Temperature on Characteristics of Gallium Nitride Thin Films Prepared Via Two-Step Method

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Acta Metallurgica Sinica (English Letters) Aims and scope

Abstract

In this research, the growth of GaN thin films on c-plane sapphire (0001) substrates via two-step method without the assist of buffer layer and catalysts was demonstrated. First, gallium oxide (Ga2O3) thin films were deposited on sapphire substrates by radio frequency magnetron sputtering method. The deposited Ga2O3 thin films were then nitridated at various temperatures. In this research, attention is focused on the influence of nitridation temperatures on the structural and optical properties of the synthesized GaN thin films. It is revealed that 950 °C is the optimal nitridation temperature for synthesizing hexagonal wurtzite GaN thin film with preferential (0002) growth direction.

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Acknowledgments

The authors are grateful for the financial support from the FRGS Grant (Account No: 203/PFIZIK/6711282). The corresponding author would like to thank the Ministry of Higher Education Malaysia for the MyPhD scholarship scheme to pursue his doctorate study.

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Authors and Affiliations

  1. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800, Penang, Malaysia

    Chee Yong Fong, Sha Shiong Ng, Fong Kwong Yam, Haslan Abu Hassan & Zainuriah Hassan

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  1. Chee Yong Fong
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  2. Sha Shiong Ng
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  3. Fong Kwong Yam
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  4. Haslan Abu Hassan
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  5. Zainuriah Hassan
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Correspondence to Chee Yong Fong.

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Fong, C.Y., Ng, S.S., Yam, F.K. et al. Effects of Nitridation Temperature on Characteristics of Gallium Nitride Thin Films Prepared Via Two-Step Method. Acta Metall. Sin. (Engl. Lett.) 28, 362–366 (2015). https://doi.org/10.1007/s40195-015-0206-z

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  • DOI: https://doi.org/10.1007/s40195-015-0206-z

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