Abstract
We investigated how SrOx segregates on a Nb doped SrTiO3 (100) surface by in air annealing. Using atomic force and photoemission electron microscopes, we can directly visualize the morphology and the electronic phase changes with SrOx segregation. SrOx islands less than 2 μm in size and 1–5 unit cells thick nucleate first and grow in a labyrinth domain pattern. After prolonged annealing, SrOx forms a ~ 10 nm thick film. We show that the domain pattern can be controlled by introducing a surface miscut angle of SrTiO3. Additionally, the segregated SrOx has a lower work function, compared to that of SrTiO3. These results suggest that the control and tunability of SrOx segregation is applicable to the design of a new functional electronic devices in the semiconducting SrTiO3 based heterostructure.
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Acknowledgements
The Advanced Light Source is supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. This work was supported by IBS-R009-D1. D.S. acknowledges financial support from the Netherlands Organisation for Scientific Research under the Rubicon Program (Grant 680-50-1305). S.U. acknowledges financial support from the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (Grant No. 4090-00125). Y.J.C. acknowledges support from National Research Foundation of Korea (NRF- 2019K1A3A7A09033389, 2020R1A2C200373211) and [Innovative Talent Education Program for Smart City] by MOLIT.
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Yoo, H.K., Schwarz, D., Ulstrup, S. et al. Direct visualization and control of SrOx segregation on semiconducting Nb doped SrTiO3 (100) surface. J. Korean Phys. Soc. 80, 1042–1047 (2022). https://doi.org/10.1007/s40042-022-00471-5
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DOI: https://doi.org/10.1007/s40042-022-00471-5