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Energy Storage of Polyarylene Ether Nitriles at High Temperature

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Abstract

Polyarylene ether nitrile (PEN) was synthesized and used as film capacitors for energy storage at high temperature. Scanning electron microscopy observation indicated that the films of PEN have pinholes at nanoscales which restricted the energy storage properties of the material. The pinhole shadowing effect through which the energy storage properties of PEN were effectively improved to be 2.3 J/cm3 was observed by using the overlapped film of PEN. The high glass transition temperature (Tg) of PEN was as high as 216 °C and PEN film showed stable dielectric constant, breakdown strength and energy storage density before the Tg. The PEN films will be a potential candidate as high performance electronic storage materials used at high temperature.

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Acknowledgements

The financial support from National Natural Science Foundation of China (51603029, 51773028, 51373028) and National Postdoctoral Program for Innovative Talents (BX201700044) are gratefully acknowledged.

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Authors and Affiliations

  1. Research Branch of Advanced Functional Materials, School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 611731, People’s Republic of China

    Xiaohe Tang, Yong You, Hua Mao, Kui Li, Renbo Wei & Xiaobo Liu

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  1. Xiaohe Tang
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  2. Yong You
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  3. Hua Mao
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  4. Kui Li
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  5. Renbo Wei
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  6. Xiaobo Liu
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Correspondence to Renbo Wei or Xiaobo Liu.

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Tang, X., You, Y., Mao, H. et al. Energy Storage of Polyarylene Ether Nitriles at High Temperature. Electron. Mater. Lett. 14, 440–445 (2018). https://doi.org/10.1007/s13391-018-0051-0

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  • DOI: https://doi.org/10.1007/s13391-018-0051-0

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