Theoretical electronic and optical properties of AlGaAsN/GaAs quantum well using 10 band kp approach

Abstract

Based upon the 10-band kp approach, the electronic properties, namely the electronic band structure, effective mass, band offset, their ratio, and optical gain of AlGaAsN/GaAs, have been studied. An extensive range of electronic bandgaps spanning from 0.866 eV and 0.942 eV are observed. Considering strain, 16.7 meV/N% (keep 2%Al) splitting rates were observed due to the compressive strain. While under tensile strain, we observed a changeover from type II to type I heterostructure with a valence band offset ratio (Qv) of 0.21 < 1, which is the definition for type I heterostructure. However, a conduction band offset ratio (Qc) of 0.795, a higher value, is advantageous as it establishes better electron confinement. It is shown that (x = 0.05, y = 0.04) is the more suitable couple of contents for developing ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1-x}{\mathrm{As}}_{1-y}{\mathrm{N}}_{y}/\mathrm{GaAs}$ single quantum well compounds are emitting in the telecommunications windows range. Increasing nitrogen concentration and an active region's dimension leads to a red shift in the gain spectra. While under the influence of compressive and tensile strain, lateral variation by 214 nm is observed in the optical gain spectra. We also studied the variation of threshold current density with a density of injected carriers. These findings may help future optical device applications.