Skip to main content
SpringerLink
Log in

60Co gamma and high energy ion impacts on threshold characteristics and its recovery in N-channel depletion MOSFETs

  • Original Paper
  • Published:
Indian Journal of Physics Aims and scope Submit manuscript

Abstract

N-channel depletion MOSFETs are irradiated with 140 MeV silicon ions (Si10+) and 60Co gamma radiation separately from 100 krad to 100 Mrad of total dose. The current–voltage (I-V) variations in MOSFETs are characterized systematically before and after 140 MeV silicon ion and 60Co gamma irradiation. Threshold voltage (VTH), leakage current (IL), density of oxide trapped charges (ΔNit) and density of interface trapped charges (ΔNot) are measured. The impact of 60Co gamma radiation on VTH, IL, ΔNit and ΔNot of MOSFETs is found to be more when compared to 140 MeV silicon ions. Isothermal annealing studies are performed on the irradiated devices, and the recovery in VTH is observed to be more in the case of 140 MeV silicon ions-irradiated MOSFETs when compared to 60Co gamma-irradiated MOSFETs.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7

Similar content being viewed by others

References

  1. A Haran, M Murat and J Barak IEEE Trans. Nucl. Sci. 55 2098 (2008)

    Article  ADS  Google Scholar 

  2. A G Prakash, S C Ke and K Siddappa Semicond. Sci. Technol. 18 1037 (2003)

    Article  ADS  Google Scholar 

  3. N Pushpa and A P Gnana Indian J. Phys. 89 943 (2015)

    Article  ADS  Google Scholar 

  4. X Li, J Yang, C Liu, P Li, Y Zhao and G Liu IEEE Trans. Nucl. Sci. 64 976 (2017)

    Article  ADS  Google Scholar 

  5. N Pushpa and K C Praveen Curr. Appl. Phys. 13 66 (2013)

    Article  ADS  Google Scholar 

  6. N H Vinayakaprasanna, K C Praveen, T M Pradeep, N Pushpa, J D Cressler and A Tripathi Nucl Eng. Technol. 51 1428 (2019)

    Article  Google Scholar 

  7. N H Vinayakaprasanna, K C Praveen and N Pushpa Indian J. Phys. 89 789 (2015)

    Article  ADS  Google Scholar 

  8. N Pushpa and K C Praveen Nucl. Instr. Meth. A 613 280 (2010)

    Article  ADS  Google Scholar 

  9. Arshiya Anjum IEEE Trans. Devise Mater. Reliab. 19 696 (2019)

    Article  Google Scholar 

  10. M R Shaneyfelt, J R Schwank, D M Fleetwood and P S Winokur IEEE Trans. Nucl. Sci. 45 1372 (1998)

    Article  ADS  Google Scholar 

  11. R D Schrimpf, P J Wahle, R C Andrews, D B Cooper and K F Galloway IEEE Trans. Nucl. Sci. 35 1536 (1988)

    Article  ADS  Google Scholar 

  12. A Balasinski and T P Ma IEEE Trans. Nucl. Sci. 40 1286 (1993)

    Article  ADS  Google Scholar 

  13. A Javanainen et al. IEEE Trans. Nucl. Sci. 56 3367 (2009)

    Article  ADS  Google Scholar 

  14. S C Sun and J D Plummer IEEE Trans. Electron Dev. ED 27 1497 (1980)

    Article  ADS  Google Scholar 

  15. D Kanjilal et al. Nucl. Instrum. Methods A 97 328 (1993)

    Google Scholar 

  16. J P Biersack, J F Ziegler and U Littmark, Stop. Power Ranges Ions Matter, Pergamon (1985)

  17. SRIM Software Package http://www.srim.org (2011)

  18. J R Schwank, P S Winokur, P J McWhorter, P V Dressendorfer and D C Turpin IEEE Trans. Nucl. Sci. 31 1434 (1984)

    Article  ADS  Google Scholar 

  19. P J McWhorter and P S Winokur Appl. Phys. Lett. 48 133 (1986)

    Article  ADS  Google Scholar 

Download references

Acknowledgements

The author acknowledge with thanks to IUAC, New Delhi for high energy ion irradiation facility and Pondicherry University, Puducherry, for 60Co gamma irradiation facility. Author also thanks Mrs. Arshiya Anjum, University of Mysore, in completion of this experimental work.

Author information

Authors and Affiliations

  1. PG Department of Physics, JSS College of Arts, Commerce and Science, Ooty Road, Mysuru, 570 025, India

    N. Pushpa

Authors
  1. N. Pushpa
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to N. Pushpa.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Pushpa, N. 60Co gamma and high energy ion impacts on threshold characteristics and its recovery in N-channel depletion MOSFETs. Indian J Phys 97, 1087–1092 (2023). https://doi.org/10.1007/s12648-022-02447-4

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s12648-022-02447-4

Keywords

Search

Navigation