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Lindemann’s Role of Melting, Debye Temperature, Dimensionless Mass and Bond Energies for Si-based Tetrahedral Compound Semiconductors

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Abstract

An approach is made to calculate and analyze the combination of Lindemann’s role for melting and Debye temperature \(\left({\uptheta }_{D}\right)\) with that of lattice structure to examine ionicity and the structure factor for elements and compounds forming IV, III-V, II-VI, II-IV-V2 and I-III-VI2 tetrahedral group semiconductors. The results were found to have a direct relation of Lindemann’s ratio \(\left(f\right)\) with the mean bond length \({d}_{mean}\) of these materials in the form of \(\mathrm{f}=0.214{d}_{mean}^{-1}\left(1+{f}_{i}\right)\), where \({f}_{i}\) is the group compound ionicity, which is zero, 0.19 and 0.63 for IV, III-V and II-VI, respectively. Similar relations were found for the material dimensionless mass and material structure factor. The obtained relations had a systematic application for calculating values of both \(\mathrm{f}\) and \({\uptheta }_{D}\) for all elements and compounds forming the above groups and those from ternary chalcopyrite compounds from II-IV-V2 and I-III-V2. Lindemann’s ratio of melting \(\mathrm{f}\) for the above groups found to be in the range between 0.077 for Sn and 0.199 for CdS. Bond energies are used to explain both the dimensionless mass and Lindemann’s ratio of melting in group IV semiconductors.

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Acknowledgements

The authors would like to acknowledge the financial support from the College of Science at the Salahaddin University-Erbil in Iraq.

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This work was fully funded by the College of Science at the University of Salahaddin-Erbil (grant number 3/1/8212).

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  1. Department of Physics, College of Science, Salahaddin University-Erbil, Erbil, Kurdistan Region, Iraq

    V. O. Hassan & M. S. Omar

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Vian Othman Hassan and Mustafa Saeed Omer contributed to the study conception and design. Material preparation, data collection and analysis were performed by [Vian Othman Hassan]and [Mustafa Saeed Omar] All authors read and approved the final manuscript.

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Correspondence to V. O. Hassan.

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Hassan, V.O., Omar, M.S. Lindemann’s Role of Melting, Debye Temperature, Dimensionless Mass and Bond Energies for Si-based Tetrahedral Compound Semiconductors. Silicon 16, 15–23 (2024). https://doi.org/10.1007/s12633-023-02608-y

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