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Growth of Ultrafine Si Embedded SiO2 Nanowires by Pt Catalyst

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Abstract

Ultrafine Si embedded SiO2 nanowires have been prepared by thermal evaporation using Pt catalyst. The ultrafine Si embedded SiO2 nanowires with a diameter of about 10 nm were grown in-situ on the Si substrate, conforming to a vapor-liquid-solid growth mechanism. On account of the existence of the quantum confinement effect, the absorption edge of the ultrafine Si embedded SiO2 nanowires is slightly larger. The photoluminescence result reveals a blue shift in the ultrafine nanowires, which may also be due to the quantum confinement effect caused by the small size. The Pt-related light emission characteristics will enable the development of nanowires in the field of optoelectronics.

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Data Availability

The authors confirm that the data supporting the findings of this study are available within the article and its Supplementary Materials.

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Acknowledgements

The authors would like to express their gratitude to the reviewers of the manuscript for their valuable suggestions and comments.

Funding

This work was financially supported by the National Natural Science Foundation of China (12004050) and Foundation of Liaoning Educational Committee (LJKQZ2021137, LJKZ1024), the project of Liaoning Provincial Science and Technology Program 2018 (20180550449). Portions of this work were performed at 4W2 beamline, Beijing Synchrotron Radiation Facility (BSRF), which is supported by Chinese Academy of Sciences (grant no. KJCX2-SW-N20, KJCX2-SW-N03).

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Authors and Affiliations

  1. Laboratory Management Center, Bohai University, Jinzhou, Liaoning, China

    Xibao Yang

  2. College of Physical Science and Technology, Bohai University, Jinzhou, Liaoning, China

    Hang Lv, Shuanglong Chen & Qiushi Wang

  3. Instrumental Analysis Center, Shenzhen University, Shenzhen, Guangdong, China

    Linhai Jiang

Authors
  1. Xibao Yang
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  2. Hang Lv
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  3. Shuanglong Chen
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  4. Qiushi Wang
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  5. Linhai Jiang
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Contributions

Xibao Yang: Conceptualization, Investigation, Formal analysis, Project administration, Supervision, Methodology, Resources. Hang Lv: Conceptualization, Investigation, Supervision, Writing - original draft, Project administration, Writing - review & editing. Shuanglong Chen: Data curation.Qiushi Wang: Validation, Resources, Methodology. Linhai Jiang: Conceptualization, Methodology, Resources, Formal analysis. Hang Lv and Xibao Yang wrote the main manuscript. All authors reviewed the manuscript.

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Correspondence to Hang Lv or Linhai Jiang.

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Yang, X., Lv, H., Chen, S. et al. Growth of Ultrafine Si Embedded SiO2 Nanowires by Pt Catalyst. Silicon 15, 6825–6831 (2023). https://doi.org/10.1007/s12633-023-02538-9

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