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A Quantitative Comparison Between the Electrical Characteristics of Vertical Super Thin Body (VSTB) FET and Silicon on Insulator Vertical Super-Thin Body (SOI VSTB) FET

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Abstract

In this study, a silicon on insulator vertical super-thin body (SOI VSTB FET) is proposed and a comparative analysis of the electrical properties of SOI and conventional VSTB FET is discovered in detail. The use of suitable doping profiles significantly improves the On–Off current ratio (ION/IOFF) and sub-threshold swing (SS) of the proposed device. The SOI VSTB FET supports aggressive scaling while maintaining electrostatic integrity and low supply voltage to a large extent. The results also revealed that the SOI VSTB FET is superior in terms of Off-current (IOFF), On-current (ION), and Sub-threshold swing (SS) in comparison with the conventional VSTB FET.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, India

    Vikas Kumar, Radhe Gobinda Debnath & Srimanta Baishya

Authors
  1. Vikas Kumar
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  2. Radhe Gobinda Debnath
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  3. Srimanta Baishya
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Contributions

The findings of the research gap and simulation analysis was carried out by Vikas Kumar (corresponding author) under the guidance of Srimanta Baishya and the manuscript was drafted by Vikas kumar under the guidance of Radhe Gobinda Debnath and Srimanta Baishya.

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Correspondence to Vikas Kumar.

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Kumar, V., Debnath, R.G. & Baishya, S. A Quantitative Comparison Between the Electrical Characteristics of Vertical Super Thin Body (VSTB) FET and Silicon on Insulator Vertical Super-Thin Body (SOI VSTB) FET. Silicon 15, 3083–3090 (2023). https://doi.org/10.1007/s12633-022-02237-x

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  • DOI: https://doi.org/10.1007/s12633-022-02237-x

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