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UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications

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Abstract

Ultra-wide bandgap (Eg > 3.4 eV) channel HEMTs are attractive choice for next generation power electronics. In recent years, β-Ga2O3 based field effect transistors are demonstrating excellent device performance due to its high breakdown field (Ecr ~ 8 MV/cm) and good transport properties. We report DC and RF characteristics of AlN/β-Ga2O3 HEMTs on Silicon Carbide (SiC) substrate. Compared with conventional III-nitride channel-based HEMTs, the AlN/β-Ga2O3 HEMT shows larger 2DEG (two-dimensional electron gas) density, improved drain current density, and breakdown voltage with low on-resistance. The gate field plate AlN/β-Ga2O3 HEMT with gate length (LG) of 800 nm and gate-drain (LGD) distance of 1 μm, and source-drain distance (LSD) of 2.6 μm shows ON-state current density (IDS) of 0.6 A/mm, transconductance (gm) of 288 mS/mm, blocking voltage (VBR) of 509 V, on-resistance (Ron) of 1.13 Ω.mm, current gain cut-off frequency (FT) of 27.1 GHz, power gain cut-off frequency (FMAX) of 72.3 GHz, and Johnson Figure of merit (JFoM = VBR× FT) of 13.793 THz.V. Moreover, the proposed HEMT exhibits very low switching delay of 3.5 pS, and switching loss of 1.9 × 10−16 J. These findings reveal that the proposed AlN/β-Ga2O3 HEMTs on SiC substrate are suitable candidates for future portable low switching loss power converters and RF applications.

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Acknowledgments

The authors acknowledge the Anil Neerukonda Institute of Technology and Sciences, Visakhapatnam, India-531 162 and SKP Engineering College, Thiruvannamalai, India-606 601 for providing the support and facility to carry out this research work.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, SKP Engineering College, Thiruvannamalai, 606 601, India

    S. Baskaran

  2. Department of Electronics and Communication Engineering, SRM Institute of science and Technology Ramapuram campus, Chennai, 600 089, India

    M. Shunmugathammal

  3. Department of Biomedical Engineering, KIT-Kalaignarkarunanidhi Institute of Technology, Coimbatore, 641 402, India

    C. Sivamani

  4. Department of Electronics and Communication Engineering, Seshadri Rao Gudlavalleru Engineering College, Vijayawada, Andhra Pradesh, 521 356, India

    S. Ravi

  5. Department of Electronics and Communication Engineering, Anil Neerukonda Institute of Technology and Sciences, Bheemunipatnam, 531 162, India

    P. Murugapandiyan & N. Ramkumar

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All the works in this paper have done together by S. Baskaran, M. Shunmugathammal, C. Sivamani, S. Ravi, P. Murugapandiyan, and N.Ramkumar.

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Baskaran, S., Shunmugathammal, M., Sivamani, C. et al. UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications. Silicon 14, 11079–11087 (2022). https://doi.org/10.1007/s12633-022-01846-w

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