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Design Optimization of Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron-Hole Bilayer

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Abstract

In this paper, a novel nanotube tunneling field-effect transistor (NT-TFET) with bias-induced electron-hole bilayer (EHBNT-TFET) is proposed for the first time. By the intentional misalignment and an asymmetric bias configuration of the inner-gate and outer-gate, the line tunneling takes place inside the channel, significantly improving the tunneling rate and area. The device principle and performance are investigated by calibrated 3-D TCAD simulations. Compared to the conventional NT-TFET, the proposed EHBNT-TFET exhibits an increased ON-state current (ION) about 57.2 times and a sub-60 mV/dec subthreshold swing for seven orders of magnitude of drain current. Furthermore, the increased ION and reduced gate capacitance achieve improved dynamic performance. Compared with conventional NT-TFET, the intrinsic delay decreased about 142 times is obtained in EHBNT-TFET.

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Data Availability

The data and material that support the findings of this study are available on request from the corresponding author.

Code Availability

Not Applicable.

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Acknowledgments

The authors are grateful to National Natural Science Foundation of China, Natural Science Foundation of Shang under Grant, Shanghai Science and Technology Innovation Action Plan and Science and Technology Commission of Shanghai Municipality for the financial support.

Funding

This work was supported in part by National Natural Science Foundation of China under Grant 61974056, in part by Natural Science Foundation of Shang under Grant 19ZR1471300, in part by Shanghai Science and Technology Innovation Action Plan under Grant 19511131900, and in part by Shanghai Science and Technology Explorer Plan under Grant 21TS1401700.

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Authors and Affiliations

  1. Department of Electrical Engineering, East China Normal University, Shanghai, 200241, People’s Republic of China

    Xueke Wang, Yabin Sun, Yun Liu, Xiaojin Li & Yanling Shi

  2. School of Microelectronics, Fudan University, Shanghai, 200433, People’s Republic of China

    Ziyu Liu

Authors
  1. Xueke Wang
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  2. Yabin Sun
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  3. Ziyu Liu
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  4. Yun Liu
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  5. Xiaojin Li
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  6. Yanling Shi
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Contributions

Conceptualization, methodology, writing- original draft preparation: Xueke Wang; Data analysis: Xueke Wang and Yabin Sun; Writing- review and editing: Yun Liu and Xiaojin Li; Supervision: Ziyu Liu and Yanling Shi; Resources and funding acquisition: Ziyu Liu.

Corresponding authors

Correspondence to Yabin Sun or Ziyu Liu.

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Wang, X., Sun, Y., Liu, Z. et al. Design Optimization of Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron-Hole Bilayer. Silicon 14, 9071–9082 (2022). https://doi.org/10.1007/s12633-022-01666-y

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