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Polarization Insensitive Circular Ring Resonator Based Perfect Metamaterial Absorber Design and Simulation on a Silicon Substrate

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Abstract

A novel Circular Ring Resonator (CRR) type single band metamaterial energy harvesting absorber which has the polarization insensitive property for solar cell application is designed, simulated and investigated to operate under the visible region 450THz - 750THz which is the more suitable operating range for a solar cell. The proposed Perfect Metamaterial Absorber (PMA) is designed with three layer based solar cell structure. The three layers are named as substrate, middle or dielectric layer and a top layer made by a metal conductor. The bottommost layer is considered as a substrate layer of 5 nm thickness, and it is developed by Silicon (Si). Dielectric layer is considered as a middle layer of 30 nm thickness and it is developed by a direct band gap semiconductor material called Gallium Arsenide (GaAs). A tungsten material with a thickness of 2.5 nm is applied at a top most conducting layer. It is discovered with a peak absorption rate of >75% is occurred spanning a wide frequency band of 538 THz to677 THz. In this proposed work, the parametric study of the overall of PMA is implemented in the range of 450–750 THz. At the resonance frequencies 560 THz and 670 THz, the absorber reacts with complete perfect absorption of 99.99% and 99% respectively. Also the absorber reacts with greater than 75%between 538THz - 677 THz frequency band. The tunable nature of PMA is occurred due to the top conducting material like Tungsten and dielectric semiconductor material like GaAs used in the middle layer of the design. The proposed unit cell absorber and all its analysis enable the solar cell application over the whole visible spectrum to achieve an absorption rate of greater than 75%. Various iterations are carried out and discussed to illustrate added features of the proposed work using (S21) and (S11) properties. The proposed work is determined to be the optimum absorber for a solar cell to produce high efficiency.

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Data Availability

The data samples have been taken using Ansys HFSS.

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Acknowledgements

The authors would like to express gratitude to Department of Technical Education and RF Laboratory, Department of Electronics and communication Engineering, Karunyainsitute of Technology an Sciences, Coimbatore, India. The authors would also like to thank to Vice Chancellor, Dr. A.P.J. Abdul Kalam Technical University, and Uttar Pradesh, India Code Availability The relevant code with the manuscript is also available and would be available, if will be asked to do so later.

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The author(s) received no financial support for the research, authorship, and/or publication of this article. Availability of.

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Authors and Affiliations

  1. RF lab Department of Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, Coimbatore, India

    H. Victor Du John, Tony Jose, A. Amir Anton Jone & K. Martin Sagayam

  2. Department of Information Technology, College of Technology, Govind Ballabh Pant University of Agriculture and Technology, Pantnagar, U.K., India

    Binay Kumar Pandey

  3. Department of Technical Education, IET, Dr. A.P.J. Abdul Kalam Technical University, Lucknow, Uttar Pradesh, India

    Digvijay Pandey

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  1. H. Victor Du John
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  2. Tony Jose
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  3. A. Amir Anton Jone
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  4. K. Martin Sagayam
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  5. Binay Kumar Pandey
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  6. Digvijay Pandey
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All authors contributes and approved the final manuscript.

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Correspondence to Binay Kumar Pandey or Digvijay Pandey.

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Du John, H.V., Jose, T., Jone, A.A.A. et al. Polarization Insensitive Circular Ring Resonator Based Perfect Metamaterial Absorber Design and Simulation on a Silicon Substrate. Silicon 14, 9009–9020 (2022). https://doi.org/10.1007/s12633-021-01645-9

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