Abstract
A strong influence of nitrogen gas on the content of surface hydroxyl groups of TiO2 films by atomic layer deposition (ALD) was investigated by X-ray photoelectron spectroscopy (XPS), contact angle measuring system, and UV–Vis spectrophotometer. XPS spectra of O 1s indicate that the content of surface hydroxyl groups is varied when using N2 as carrier gas. The results of water contact angles and optical reflection spectra show that the content variation of surface hydroxyl groups influences the wetting properties and optical reflectivity of TiO2 films. A surface reaction model is suggested to explain the ALD reaction process using N2 as carrier gas.
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Bennett JM, Pelletier E, Albrand G, Borgogno JP, Lazarides B, Carnigilia CK, Schmell RA, Allen TH, Tutter-Hart T, Guenther KH, Saxer A. Comparison of the properties of titanium dioxide films prepared using various techniques. Appl Opt. 1989;28(16):3303.
Diebold U. The surface science of titanium dioxide. Surf Sci Rep. 2003;48(5–8):53.
Gratzel M. Solar energy conversion by dye-sensitized photovoltaic cells. Inorg Chem. 2005;44(20):6841.
Rausch N, Burte EP. Thin high-dielectric TiO2 films prepared by low pressure MOCVD. Microelectron Eng. 1992;19(1–4):725.
Xu Q, Liu F. Transformation behavior and shape memory effect of Ti50−x Ni48Fe2Nb x alloys by aging treatment. Rare Met. 2012;31(4):311.
Aarik J, Aidla A, MaÈndar H, Uustare T. Atomic layer deposition of titanium dioxide from TiCl4 and H2O: investigation of growth mechanism. Appl Surf Sci. 2001;172(1–2):148.
Cameron MA, Gartland IP, Smith JA, Diaz SF, George SM. Atomic layer deposition of SiO2 and TiO2 in alumina tubular membranes: pore reduction and effect of surface species on gas transport. Langmuir. 2000;16(19):7435.
Aarik J, Karlis J, Mändar H, Uustare T, Sammelselg V. Influence of structure development on atomic layer deposition of TiO2 thin films. Appl Surf Sci. 2001;181(3–4):339.
Schuisky M, Kukli K, Aarik J, Lu J, Härsta A. Epitaxial growth of TiO2 films in a hydroxyl-free atomic layer deposition process. J Cryst Growth. 2002;235(3–4):293.
Hopfengartner G, Borgmann D, Rademacher I, Wedler G, Hums E, Spitznagel GW. XPS studies of oxidic model catalysts: internal standards and oxidation numbers. J Electron Spectrosc Relat Phenom. 1993;63(2):91.
Sayers CN, Armstrong NR. X-ray photoelectron spectroscopy of TiO2 and other titanate electrodes and various standard titanium oxide materials: surface compositional changes of the TiO2 electrode during photoelectrolysis. Surf Sci. 1978;77(3–4):301.
Zhao F, Cui X, Wang B, Hou JG. Preparation and characterization of C54 TiSi2 nanoislands on Si (1 1 1) by laser deposition of TiO2. Appl Surf Sci. 2006;253(5):2785.
Aarik J, Aidla A, Sammelselg V, Siimon H, Uustare T. Control of thin film structure by reactant pressure in atomic layer deposition of TiO2. J Cryst Growth. 1996;169(3):496.
Ferguson JD, Yoder AR, Weimer AW, George SM. TiO2 atomic layer deposition on ZrO2 particles using alternating exposures of TiCl4 and H2O. Appl Surf Sci. 2004;226(4):393.
Primet M, Pichat P, Mathieu MV. Infrared study of the surface of titanium dioxides. II. Acidic and basic properties. J Phys Chem. 1971;75(9):1216.
Matero RJ, Rahtu A, Ritala M. In situ quadrupole mass spectrometry and quartz crystal microbalance studies on the atomic layer deposition of titanium dioxide from titanium tetrachloride and water. Chem Mater. 2001;13(12):4506.
Nakamura M, Kato S, Aoki T, Sirghi L, Hatanaka Y. Role of terminal OH groups on the electrical and hydrophilic properties of hydro-oxygenated amorphous TiO x :OH thin films. J Appl Phys. 2001;90(7):3391.
Lawless D, Serpone N, MeiselJ D. Role of hydroxyl radicals and trapped holes in photocatalysis. A pulse radiolysis study. Phys Chem. 1991;95(13):5166.
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This work was financially supported by the National Science and Technology Major Project (No. 2009ZX02037-003) and the China Postdoctoral Science Foundation (No. 2011M500996).
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Rao, ZP., Liu, BW., Li, CB. et al. Dehydroxylation action on surface of TiO2 films restrained by nitrogen carrier gas during atomic layer deposition process. Rare Met. 33, 583–586 (2014). https://doi.org/10.1007/s12598-013-0206-y
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DOI: https://doi.org/10.1007/s12598-013-0206-y