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Optimizing 2D-metal contact in layered Tin-selenide via native oxide modulation

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Abstract

The discovery of two-dimensional (2D) semiconductor has opened up new avenues for the development of short-channel field-effect transistors (FETs) with desired electrical performance. Among them, orthorhombic tin-selenide (SnSe) has garnered increasing attention due to its potential applications in a variety of electronic, optoelectronic, and thermoelectric devices. However, the realization of high-performance SnSe FETs with low contact resistance (Rc) remains a challenge. Herein, we systematically investigate the contact of few-layer SnSe FETs through the modulation of native oxide on SnSe by using different metals. It is found that chromium (Cr)-contacted devices possess the best FET performance, such as electron mobility up to 606 cm2/(V·s) at 78 K, current on/off ratio exceeding 1010, and saturation current of ∼ 550 µA/µm, where a negligible Schottky barrier (SB) of ∼ 30 meV and a low contact resistance of ∼ 425 Ω µm are achieved. X-ray photoelectron spectroscopy (XPS) and cross-sectional electron dispersive X-ray spectroscopy (EDX) results further reveal that the improved contact arises from the Cr-induced reduction of native oxide (SnOx) to Sn, which thins the tunneling barrier for efficient electron injection. Our findings provide a deep insight into the 2D-metal contact of SnSe and pave the way for its applications in future nanoelectronics.

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Acknowledgements

C. H. and Y. M. S. acknowledge the financial support from the National Natural Science Foundation of China (Nos. 62004128 and 61874074), the Fundamental Research Foundation of Shenzhen (No. JCYJ20190808152607389), and the Science and Technology Project of Shenzhen (No. JCYJ20220531100815034). H. N. L. acknowledges the Guangdong Basic and Applied Basic Research Foundation (No. 2022A1515012055). The authors thank the technical support from the Instrumental Analysis Center and the Photonics Center of Shenzhen University.

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Authors and Affiliations

  1. International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China

    Yue Zheng, Qi You, Zhentian Yin, Jian Tang, Ke Jiang, Zihao Xie & Cheng Han

  2. College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China

    Henan Li & Yumeng Shi

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  1. Yue Zheng
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  2. Qi You
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  3. Zhentian Yin
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  9. Yumeng Shi
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Correspondence to Cheng Han.

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Zheng, Y., You, Q., Yin, Z. et al. Optimizing 2D-metal contact in layered Tin-selenide via native oxide modulation. Nano Res. 17, 3014–3020 (2024). https://doi.org/10.1007/s12274-023-6047-6

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  • DOI: https://doi.org/10.1007/s12274-023-6047-6

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