Abstract
The layered transition metal dichalcogenides (TMDs) have raised considerable interest in the past decades for both fundamental physics and low-dimensional nanodevice applications. Recently, intriguing phenomena of Ising superconductivity and quantum metallic state have been reported in two-dimensional (2D) 4Ha-TaSe2 nanodevices. Here, we report the magnetic field induced superconductor–metal transition (SMT) in mechanical exfoliated 4Ha-TaSe2 nanodevices with thickness down to 2.5 nm. We observe the quantum Griffiths singularity (QGS) of SMT in thin 4Ha-TaSe2 nanodevices by performing ultralow temperature transport measurements and activated scaling analysis. With increasing the thickness of TaSe2 nanodevice to 10.6 nm, the signature of magnetoresistance crossing region can hardly be detected, revealing the thickness dependence of SMT. In this procedure, the disorder strength plays a dominant role. This work enriches the platform for studying QGS and may stimulate further investigations on the correlation between different novel quantum phenomena in the same 2D superconducting system.
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Acknowledgements
We greatly thank J. J. Yan and X. Lin for their assistance and support in the ultralow temperature transport measurements. We thank Z. J. Wang, Z. Y. Yang, J. W. Luo, P. F. Zhan, Z. H. Cui, and Y. L. Li for helpful discussions in revising the manuscript. This work was financially supported by the National Natural Science Foundation of China (Nos. 11888101, 11974430, and 12174442), the National Key R&D Program of China (Nos. 2018YFA0305600 and 2022YFA1403103), the Strategic Priority Research Program of Chinese Academy of Sciences (No. XDB28000000), the Innovation Program for Quantum Science and Technology (No. 2021ZD0302400), Young Elite Scientists Sponsorship Program by BAST (No. BYESS2023452), the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China (No. 22XNKJ20).
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Xing, Y., Liu, Y., Yang, P. et al. Quantum Griffiths singularity in two-dimensional superconducting 4Ha-TaSe2 nanodevices. Nano Res. 16, 12281–12285 (2023). https://doi.org/10.1007/s12274-023-5901-x
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DOI: https://doi.org/10.1007/s12274-023-5901-x