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InAs/GaAs quantum dots grown on different GaAs substrates with graded In x Ga1 − x As strain-reducing layer

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Abstract

Self-assembled InAs quantum dots with graded composition strain-reducing layer (SRL) grown on exact substrates were studied. It is shown that a graded In x Ga1 − x As SRL leads to growth quality improvement, emission efficiency enhancement, and wavelength blueshift. Samples grown on 2° misoriented substrates with different In contents in graded In x Ga1 − x As SRL were also investigated, and emission efficiency enhancement and wavelength blueshift were found when graded SRL was introduced and when the change rate of In content in graded In x Ga1 − x As SRL was enlarged.

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Authors and Affiliations

  1. Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China

    Shuping Fei, Zhongwei Shi & Lirong Huang

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  1. Shuping Fei
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  2. Zhongwei Shi
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  3. Lirong Huang
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Correspondence to Lirong Huang.

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Fei, S., Shi, Z. & Huang, L. InAs/GaAs quantum dots grown on different GaAs substrates with graded In x Ga1 − x As strain-reducing layer. Front. Optoelectron. China 3, 241–244 (2010). https://doi.org/10.1007/s12200-010-0109-6

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  • DOI: https://doi.org/10.1007/s12200-010-0109-6

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