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A self-powered ZnO nanoarrays/GaN heterojunction ultraviolet photodetectors grown on Si(111) substrate

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Abstract

A self-powered, ZnO nanorod arrays (NRs)/GaN/Si heterojunction ultraviolet (UV) photodetector was synthesized straightforwardly. This high-performance device has an excellent response under UV radiation without bias. The tensile stress at the ZnO/GaN/Si interface presumably strengthened the built-in electric field, which effectively separated and extracted the photogenerated electron–hole pairs. These results may provide a new synthetic pathway towards low-cost, high-performance, self-powered ZnO/GaN heterojunction UV photodetectors.

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Acknowledgements

This work was supported by LiaoNing Revitalization Talents Program (no. XLYC1807004), Joint Research Fund Liaoning-Shenyang National Laboratory for Materials Science (2019JH3/30100005, 2019010281-JH3/301), Guangxi Key Laboratory of Precision Navigation Technology and Application, the Guilin University of Electronic Technology (No. DH2020015), Open Foundation of Zhenjiang Key Laboratory for high technology research on marine functional films (ZHZ2019005), The Sun Bird Undergraduate Research Project of Dalian Minzu University (no. tyn2021249), and Training Program of Innovation and Entrepreneurship for Undergraduates in Dalian Minzu University (202112026013).

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Authors and Affiliations

  1. School of Physics and Materials Engineering, Dalian Minzu University, Dalian, 116600, People’s Republic of China

    Mingna Yan, Naisen Yu, Shiyu Du & Yunfeng Wu

  2. Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, People’s Republic of China

    Naisen Yu & Haiou Li

  3. School of Materials and Engineering, Jiangsu University of Science and Technology, Zhenjiang, 212000, People’s Republic of China

    Naisen Yu

Authors
  1. Mingna Yan
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  2. Naisen Yu
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  3. Shiyu Du
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  5. Yunfeng Wu
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Correspondence to Naisen Yu.

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Yan, M., Yu, N., Du, S. et al. A self-powered ZnO nanoarrays/GaN heterojunction ultraviolet photodetectors grown on Si(111) substrate. Bull Mater Sci 45, 105 (2022). https://doi.org/10.1007/s12034-022-02679-4

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  • DOI: https://doi.org/10.1007/s12034-022-02679-4

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