Abstract
Reliability prediction and assessment play a significant role in determining the performance of power converter designs. Typically, the DC–DC power converters are one of the most required electronic components, and their reliability must be improved to increase the overall efficiency of the entire system. Usually, for power converters, the reliability is estimated using different standards such as MIL—HDBK, RIAC-217, Telcordia, IEC-TR-6238, and FIDES. This work aims to review the three main reliability assessment models (MIL—HDBK, RIAC-217, and FIDES) mainly used to validate the performance of DC-DC power converters. The advantages and disadvantages of each technique used in the DC-DC converter’s reliability design have been discussed and compared. We also presented an optimum assessment tool, which covers the fundamental factors for the reliability analysis of power converters. Furthermore, the reliability calculation tools like Markov, Monto Carlo and others are discussed with their significance in the reliability analysis of power converters. The inevitable part of the reliability study is the fault identification and diagnosis, which are elaborated with the methodologies reported in the literature for power converters. The importance of reliability study with respect to the application is briefly discussed. Finally, a comparative analysis of the various reliability statistical approaches would guide the researchers in choosing the appropriate methods for their reliability study. The principal objective behind this study is to propose a road map for power electronic engineers to perform the reliability study on DC–DC power converters.
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Abbreviations
- MIL-HDBK-217:
-
Military handbook—2017
- RIAC-217:
-
Reliability information analysis center—217
- FIDES:
-
Latin:trust
- MTTR:
-
Mean time to repair
- MTTF:
-
Mean time for failure
- MTBF:
-
Mean time between failure
- RAMS:
-
Reliability availability maintainability safety
- FIT:
-
Failure in time
- IEC:
-
International electrotechnical commission
- DC:
-
Direct current
- SiC:
-
Silicon carbide
- DMPPT:
-
Distributed maximum power point tracking
- PV:
-
Photovoltaic
- SEM:
-
Scanning electron microscopy
- SAM:
-
Scanning acoustic microscope
- OC:
-
Open-circuit
- SC:
-
Short-circuit
- PI:
-
Proportional-integral
- SMPS:
-
Switched-mode power supply
- PoF:
-
Physics of failure
- WEC:
-
Wind energy conversion
- LVRT:
-
Low voltage ride through
- ALTs:
-
Accelerated lifetime tests
- PHM:
-
Prognostics and health management
- R(t):
-
Reliability of the converter
- µ :
-
Average failure rate
- \({\lambda }_{SW}\) :
-
Failure rate of the switch
- \({\lambda }_{P}\) :
-
Predicted failure rate
- \({\lambda }_{D}\) :
-
Failure rate of the diode
- \({\lambda }_{Physical}\) :
-
Physical contribution
- \({\lambda }_{TCB}\) :
-
Base failure rate, temperature cycling
- \({\lambda }_{L}\) :
-
Failure rate of the inductor
- \({\lambda }_{EOS}\) :
-
Failure rate, electrical overstress
- \({\lambda }_{C}\) :
-
Failure rate of the capacitor
- \({\pi }_{T}\) :
-
Temperature factor
- \({\pi }_{G}\) :
-
Reliability growth failure rate multiplier
- \({\pi }_{E}\) :
-
Environmental factor
- \({\pi }_{TE}\) :
-
Failure rate multiplier, temperature—environment
- \({\pi }_{DCO}\) :
-
Failure rate multiplier for duty cycle, operating
- \({\pi }_{S}\) :
-
Stress factor/failure rate multiplier for stress
- \({\pi }_{C}\) :
-
Contact construction factor
- \({\pi }_{DCN}\) :
-
Failure rate multiplier for duty cycle, non-operating
- \({\pi }_{TO}\) :
-
Failure rate multiplier for temperature
- \({\pi }_{Q}\) :
-
Quality factor
- \({\pi }_{A}\) :
-
Application factor
- \({\pi }_{CR}\) :
-
Failure rate multiplier, cycling rate
- θ JC :
-
Junction to case temperature
- T board-amb :
-
Average board temperature during a phase (°C)
- \({\pi }_{PM}\) :
-
Part manufacturing
- \({\pi }_{Process}\) :
-
Quality control over the development, manufacturing and usage process
- \({{\lambda }_{OB}/\lambda }_{b}\) :
-
Base failure rate
- T AO :
-
Operating temperature
- ΔT cycling :
-
Amplitude of variation associated with a cycling phase (°C)
- T AE :
-
Ambient temperature, non-operating
- T C :
-
Case temperature
- T m :
-
Mean junction temperature
- T J :
-
Worst case junction temperature
- ΔT :
-
Change in temperature
- Vs :
-
Stress ratio
- E a :
-
Activation energy parameter
- RH ambient :
-
Humidity associated with a phase (%)
- K :
-
Boltzmann constant
- T max-cyc :
-
Maximum board temperature during a cycling phase (°C)
- \({\pi }_{Thermal}\) :
-
Thermal stress factor
- \({\pi }_{Electrical}\) :
-
Electrical stress factor
- \({\pi }_{Mechanical}\) :
-
Mechanical stress factor
- \({\pi }_{Chemical}\) :
-
Chemical stress factor
- tannual :
-
Time associated with each phase over a year (hours)
- \({\pi }_{Humidity}\) :
-
Humidity stress factor
- N annual-cy:
-
Number of cycles associated with each cycling phase over a year
- Grms:
-
Vibration amplitude associated with each random vibration phase
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DJN had the idea for the article, JMS and AL performed the literature search and data analysis and drafted the work. DA, ZMA and SHEAA critically revised the work.
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Navamani, D.J., Sathik, J.M., Lavanya, A. et al. Reliability Prediction and Assessment Models for Power Components: A Comparative Analysis. Arch Computat Methods Eng 30, 497–520 (2023). https://doi.org/10.1007/s11831-022-09806-8
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DOI: https://doi.org/10.1007/s11831-022-09806-8