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Structural and electrical investigation of BLT films deposited at different times using electron beam evaporation technique

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Abstract

Thin films Bi4Ti3O12 (BLT) were deposited using electron beam evaporation on silicon substrate at several times, also on AlN/Si and SiO2/Si substrates. Thin films morphology and thickness were measured via scanning electron microscopy (SEM). The crystallography was studied using X-ray diffraction (XRD) technique for films which have a (0010) preferred orientation in all substrate types. The capacitance values were contingent on frequency value in C-V measurement. The ferroelectric characterization was investigated for BLT film deposited on isolator layer (SiO2 or AlN) for Al/Bi4Ti3O12/SiO2/Si devices. Memory effect value varied from 1 V to 3 V depending on the thin films isolator on substrate.

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Acknowledgments

The authors greatly acknowledge the encouragement to this project by Prof. I. Othman, the director general of Atomic Energy Commission of Syria, Dr. W. Khouri, and Dr. M. S. Rihawy for valuable discussion.

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Authors and Affiliations

  1. Department of Physics, Atomic Energy Commission, P.O. Box 6091, Damascus, Syria

    Bassam Abdallah, Fareza Nasrallah & Asmahan Obied

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  1. Bassam Abdallah
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  2. Fareza Nasrallah
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  3. Asmahan Obied
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Correspondence to Bassam Abdallah.

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Abdallah, B., Nasrallah, F. & Obied, A. Structural and electrical investigation of BLT films deposited at different times using electron beam evaporation technique. Optoelectron. Lett. 19, 347–352 (2023). https://doi.org/10.1007/s11801-023-2004-6

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  • DOI: https://doi.org/10.1007/s11801-023-2004-6

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