Abstract
An experimental investigation on the residual stress in porous silicon micro-structure by means of micro-Raman spectroscopy is presented. It is shown by detecting the Raman peak shifts on the surfaces and cross-sections of electrochemical etched porous silicon samples with different porosities that serious residual stresses distribute complicatedly within the whole porous silicon structure. It is proved that micro-Raman spectroscopy is an effective method for residual stress testing on the micro-structures applied in optoelectronics and microelectronics.
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Antrag GZ 398, Ghinesisch-Deutsches Zentrum für Wissenschaftsförderung
This work was supported by the National Natural Science Foundation of China(10232030)
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Kang, YI., Qiu, W. & Lei, Zk. A robust method to measure residual stress in micro-structure. Optoelectron. Lett. 3, 126–128 (2007). https://doi.org/10.1007/s11801-007-7022-2
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DOI: https://doi.org/10.1007/s11801-007-7022-2